
Allicdata Part #: | VS-10ETF04FPPBF-ND |
Manufacturer Part#: |
VS-10ETF04FPPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 10A TO220FP |
More Detail: | Diode Standard 400V 10A Through Hole TO-220-2 Full... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | TO-220-2 Full Pack |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | 10ETF04 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VS-10ETF04FPPBF, part of the VS-10ET Series of ultra-small Schottky barrier diodes, is a single rectifier with a clean and simple architecture. It has a low on-resistance of 4.5 Ohms and a low voltage drop of 0.65V. This makes it suitable for use in low-power, space-constrained applications, including DC/DC converters, automotive applications, or other power management solutions.
The VS-10ETF04FPPBF features an integrated Schottky diode in its architecture, which provides superior switching characteristics and lower power consumption than a standard rectifier. This single rectifier offers fast switching times, allowing for quick charging and discharging times with minimal power dissipation, making it an ideal solution for high-speed power conversion and control systems.
The VS-10ETF04FPPBF is ideal for applications where a low voltage drop, low on-resistance, and fast switching times are essential, such as solar panel systems or other power conversion solutions. The device is able to handle peak currents of up to 2.2A and reverse breakdown voltages of 1V (min), making it suitable for a wide variety of power management solutions.
The working principle of the VS-10ETF04FPPBF is based on an integrated Schottky diode. This is a semiconductor device that consists of two layers of doped material, a metal contact and a semiconductor contact. When a voltage is applied to the metal contact and the semiconductor contact, it creates a rectifying junction that is able to allow current to flow in one direction and block it in the other.
The semiconductor layer of the VS-10ETF04FPPBF has a highly doped region that allows it to take a relatively large voltage at low on-resistance while still providing a fast switching speed. This is achieved by the diode’s rapid avalanche breakdown capabilities, which provide very low forward voltage drop and high reverse break-down voltage.
The VS-10ETF04FPPBF is a great choice for applications in which a low on-resistance, low voltage drop, and fast switching times are essential. The device’s integrated Schottky diode provides a higher switching speed than a standard rectifier, making it ideal for applications such as DC/DC converters, automotive applications, or other power management solutions. With a low on-resistance of 4.5 ohms and a low voltage drop of 0.65V, the VS-10ETF04FPPBF is the perfect solution for space-constrained designs.
The specific data is subject to PDF, and the above content is for reference
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
