
Allicdata Part #: | VS-10ETS10SPBF-ND |
Manufacturer Part#: |
VS-10ETS10SPBF |
Price: | $ 1.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 10A TO263AB |
More Detail: | Diode Standard 1000V 10A Surface Mount TO-263AB (D... |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 0.92842 |
Series: | -- |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 10A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB (D²PAK) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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VS-10ETS10SPBF Application Field and Working Principle
The VS-10ETS10SPBF is a single phase, full-wave, glass passivated rectifier diode, designed for use in power applications. The device is specifically designed for direct current (DC) and/or alternating current (AC) voltage regulation, including input protection for transformers, solar panels, etc. The VS-10ETS10SPBF features a maximum peak reverse voltage of 10 V, a maximum continuous current rating of 10A, and a maximum instantaneous current rating of 25A. The reverse recovery time is specified as 1.5 µs, and a maximum storage temperature of 175°C. The device is shielded by a metal case with molded terminal pins for mechanical and thermal stability.
The working principle of a rectifier diode is based on four principles: forward-bias characteristic, PN junction formation, minority carrier injection, and reverse-bias characteristics. As the diode is forward-biased, free electrons in the n-type layer move towards the positive voltage, which creates a current flow through the device.
Once the current passes through the diode, a potential develops across the junction of the reversed-biased diode that opposes the forward-bias voltage, resulting in a decrease in the total current through the junction. Thus, the rectifier effectively limits the forward current and allows only the current in the forward-biased direction to pass through the diode. In addition, a PN junction is created across which electrons from the n-type layer are injected into the p-type layer, resulting in a further decrease in the total current.
The reverse-bias characteristics of the diode are also important for proper rectification. When the diode is reverse-biased, the electrons in the n-type layer move away from the positive voltage, creating a depletion layer that effectively blocks any current from flowing in the opposite direction from the flow through the forward-biased diode. This prevents current from passing through the diode in the opposite direction, thus allowing only forward current to pass through the device. This is an important aspect of rectification as it ensures that the current passing through the rectifier is unidirectional.
The VS-10ETS10SPBF diode is capable of handling high levels of power and current, making it an ideal choice for viable applications that require high power or current regulation. It is also designed with safety features, including a metal case and terminal pins that absorb excessive heat and contain the device during normal and excessive currents, thus making it a safe and reliable choice for direct current and/or alternating current voltage regulation and input protection.
The specific data is subject to PDF, and the above content is for reference
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