VS-10RIA100M Allicdata Electronics
Allicdata Part #:

VS-10RIA100M-ND

Manufacturer Part#:

VS-10RIA100M

Price: $ 11.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: SCR 1000V 10A TO-48
More Detail: SCR 1kV 10A Standard Recovery Chassis, Stud Mount ...
DataSheet: VS-10RIA100M datasheetVS-10RIA100M Datasheet/PDF
Quantity: 1000
100 +: $ 10.71860
Stock 1000Can Ship Immediately
$ 11.79
Specifications
Current - On State (It (RMS)) (Max): 10A
Supplier Device Package: TO-208AA (TO-48)
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
Operating Temperature: -65°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - Off State (Max): 10mA
Current - Hold (Ih) (Max): 130mA
Series: --
Current - On State (It (AV)) (Max): 25A
Voltage - On State (Vtm) (Max): 1.75V
Current - Gate Trigger (Igt) (Max): 60mA
Voltage - Gate Trigger (Vgt) (Max): 2V
Voltage - Off State: 1kV
Part Status: Active
Packaging: Tube 
Description

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Thyristors are a type of solid-state switch which can be used in a number of different application fields, but have a unique capacity to handle large currents. A Thyristor is a semiconductor device that is composed of four layers of alternating N-type and P-type material devices, forming a four-layered PNPN structure. In the four layered PNPN structure, the N-type material devices have a much higher resistance than the P-type devices, resulting in the ability to pass higher currents than other types of semiconductors.

The VS-10RIA100M Thyristor is a popular Thyristor for controlling large amounts of power in applications such as uninterruptible power supplies and induction heating. The VS-10RIA100M is designed for rapid switching applications, with a turn-off commutated with the aid of an auxiliary turn-off gate. The VS-10RIA100M is capable of controlling large amounts of power and can be used in a wide range of application fields.

The working principle behind Thyristors is based on the concept of negative differential resistance (NDR). In an NDR device, an increase in the forward current causes an increase in voltage, while a decrease in the forward current causes a decrease in voltage. The reason for this behavior is due to the PNPN structure, which has a band gap in the P-type layer and a decrease in the forward current causes a decrease in the energy gap, resulting in a voltage drop. By utilizing this principle, a Thyristor is able to rapidly switch between high current and low current, depending on the voltage at which the device is operating.

The VS-10RIA100M Thyristor is capable of switching currents up to 100A and can be used in a wide variety of high-power applications. An important feature of the VS-10RIA100M is that it can be quickly switched from an on state to an off state, allowing for fast switching speed. The device also has a temperature sensing and over temperature protection device built-in to protect from thermal runaway. The VS-10RIA100M has an internal gate driver circuit that allows for fast switching and the device is capable of operating at frequencies up to 10kHz.

The VS-10RIA100M is a popular Thyristor for controlling large currents in a wide array of applications. The device has an internal gate driver circuit and is capable of operating at high frequencies, making it a great choice for applications that require fast switching. The device is also equipped with a temperature sensing device which ensures safe and reliable operation.

The specific data is subject to PDF, and the above content is for reference

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