VS-10TQ035S-M3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	35V
Current - Average Rectified (Io):	10A
Voltage - Forward (Vf) (Max) @ If:	570mV @ 10A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	2mA @ 35V
Capacitance @ Vr, F:	900pF @ 5V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Operating Temperature - Junction:	-55°C ~ 175°C

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Introduction

The VS-10TQ035S-M3 is a rectifier diode that belongs to the single family, designed and manufactured by Vishay Siliconix, a subsidiary of the Vishay Intertechnology group. This specific model is a high-speed Schottky Barrier rectifier, featuring a forward current of 10A, reverse voltage of 35V, very low forward voltage drop, fast switching, and low power losses due to its soft recovery characteristic.

Application Field

The most common type of diodes are rectifiers, used in many applications including power supplies, charge converters, and signal rectification. The VS-10TQ035S-M3 diode is mainly used in applications including converters, alternative current-to-direct current conversion, audio visual equipment, as well as many others.The fast switching and excellent heat dissipation characteristics of the VS-10TQ035S-M3 make it suitable for high-frequency applications, such as uninterruptible power supplies or other switched-mode applications. Its low forward voltage drop allows for a very efficient regulation of the circuit\'s power conversion, providing power dissipated in the diode lower than other conventional models.

Working Principle

The VS-10TQ035S-M3 works as a current-limiting component in a circuit, allowing current to flow in only one direction. This component\'s forward bias conduction is determined by the voltage drop between its anode and cathode, while its reverse bias conduction is determined by a built-in depletion layer.In order to activate a VS-10TQ035S-M3 rectifier, a voltage greater than 0.5V needs to be applied on its anode and a voltage lower than - 0.5V needs to be applied to its cathode. The higher voltage level, in comparison to other rectifiers, allows the device to feature lower forward voltage drop and reverse leakage current.The high-speed switching characteristics of the device are mainly due to its silicon dioxide epi-layer and its high C-V (capacitance to voltage) ratio in reverse. The combination of these two parameters ensures a soft switching that provides excellent switching performance and fast recovery times.

Conclusion

The VS-10TQ035S-M3 rectifier diode from Vishay Siliconix is a single element in the rectifier family and it is mainly used in applications that require fast switching and low power dissipation. Its working principle relies mainly on a built-in depletion layer and a 0.5V voltage drop for activation, which provides very low forward voltage drop and reverse leakage currents. This device is particularly suitable for switching-mode and uninterruptible power supply applications.

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