Allicdata Part #: | VS-10TQ035STRRHM3-ND |
Manufacturer Part#: |
VS-10TQ035STRRHM3 |
Price: | $ 0.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 35V 10A D2PAK |
More Detail: | Diode Schottky 35V 10A Surface Mount D2PAK |
DataSheet: | VS-10TQ035STRRHM3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.67165 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 35V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 570mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 2mA @ 35V |
Capacitance @ Vr, F: | 900pF @ 5V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | -55°C ~ 175°C |
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VS-10TQ035STRRHM3 is a rectifier diode that belongs to the single rectifier diode category. It is designed for application in various electronic circuits and devices. It has high blocking voltage and low forward voltage, resulting in higher efficiency and fewer losses.
VS-10TQ035STRRHM3 is an epitaxial silicon rectifier diode, suitable for a wide range of operating temperatures from -55°C to 110°C. It uses a planar substrate that makes it more suitable for use in high-voltage circuits. It features good electrical characteristics such as a low forward voltage drop and low forward current, high surge current capabilities, and high power dissipation ratings.
The rectifier diode is used in a wide range of applications, such as power supply and power-related applications, voltage-regulating circuits, converters and regulators, and AC control circuits. It is also used in industrial control, automobile electronics, personal computers, power supplies, and other consumer electronics. The device is available in both through-hole and surface-mount packages.
The working principle of the diode is based on the PN junction. When the anode is connected to the positive terminal of the input voltage and the cathode is connected to the negative terminal, the diode will allow current to flow from the anode to the cathode. However, reverse bias does not allow current to flow from the cathode to the anode. This is due to the depletion layer formed at the P-N junction region.
As the device operates, a small amount of reverse leakage current will flow from the anode to the cathode. This is because of the diffusion of majority carriers from the P-type material to the N-type material. The capacitive effect of the junction also plays an important role in the rectification process.
In addition, the device can be used to protect other components against reverse current and to limit the amount of power dissipated in the circuit. It is also used to reduce the reverse recovery time of rectifying diodes, increasing the speed and performance of the circuit.
The VS-10TQ035STRRHM3 is a useful component for a variety of applications and is important in the power-related industry. It has good electrical characteristics, a wide operating temperature range, and is available in different packages, making it convenient to use in different applications.
The specific data is subject to PDF, and the above content is for reference
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