Allicdata Part #: | 11DQ06TR-ND |
Manufacturer Part#: |
VS-11DQ06TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 60V 1.1A DO204AL |
More Detail: | Diode Schottky 60V 1.1A Through Hole DO-204AL (DO-... |
DataSheet: | VS-11DQ06TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 1.1A |
Voltage - Forward (Vf) (Max) @ If: | 580mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 60V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The VS-11DQ06TR is a part of the diodes - rectifiers - single group manufactured by Vishay, who offer a wide range of packages to suit a variety of applications. The VS-11DQ06TR is a planar Schottky diode in a surface mount TO-263 package, with a lead spacing of 2.5 mm. It features a maximum reverse recovery time of 3.2 ns, and a maximum forward voltage of 1.6 V.
The VS-11DQ06TR is an ideal choice for use in DC-DC converters, switch mode power supply circuits, power switching regulators, and current limiting applications. It is also suitable for reverse blocking and battery charge protection, amongst other applications.
The device can be used for rectification in AC/DC converters, inverters and in DC/DC converters. It is capable of rectifying AC to DC power with a minimum forward voltage of 1.6V and a transfer efficiency of up to 85%. Its Schottky diode construction gives it low forward voltage drop, which makes it suitable for use in applications where power consumption is an important consideration. It is also a good choice for use in low voltage applications where fast switching is required.
The working principle of the device is based on the PN junction theory of semiconductors. It consists of a PN junction, formed by placing two semiconductor materials of opposite conductivity next to each other. When a voltage source is connected across the PN junction, current begins to flow when the voltage reaches a certain value known as the “turn-on voltage”. When current flows through the device, the PN junction produces a barrier that prevents the current from flowing back in the opposite direction. This barrier is known as the “reverse breakdown voltage.”
The VS-11DQ06TR is an efficient, cost-effective solution for a variety of power management needs. Its modern design and low forward voltage drop make it ideal for applications where low power consumption and high efficiency are important. With its robust construction and a maximum reverse recovery time of 3.2 ns, it is an ideal choice for fast switching and low voltage DC/DC converters.
The specific data is subject to PDF, and the above content is for reference
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