VS-12CWQ04FNTRHM3 Allicdata Electronics
Allicdata Part #:

VS-12CWQ04FNTRHM3-ND

Manufacturer Part#:

VS-12CWQ04FNTRHM3

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
More Detail: Diode Array 1 Pair Common Cathode Schottky 40V 6A ...
DataSheet: VS-12CWQ04FNTRHM3 datasheetVS-12CWQ04FNTRHM3 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.70772
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 6A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 6A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Description

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As a member of the diodes-rectifiers-arrays family, the VS-12CWQ04FNTRHM3 device is suitable for a number of applications and offers many advantages in those applications. It is a highly integrated MOSFET-based power semiconductor with a high current rating and a wide DC-DC operating range.

This low-RDS(ON)-capable device offers many advantages, including fast switching, easy integration, thermal heat mitigation, low voltage losses, and excellent device reliability. It is particularly suitable for use in high-powered switching supplies, such as DC-DC converters, AC-DC power adjustment, and power supply failure detection.

The VS-12CWQ04FNTRHM3 is able to handle high current up to 16A. Its insulated gate bipolar transistor (IGBT) technology provides a wide operating range between 8V and 69V. The additional power gain provided by the device enables designers to create high-efficiency applications with lower power consumption and higher power density. Its high-frequency switching capability also helps to reduce power losses.

The device\'s internal protection features ensure that it is safe to use in a variety of applications. The device offers an integrated over-current protection, thermal overload protection, and undervoltage lockout. In addition, the device is optimized to reduce EMI problems through its integrated clamp circuit.

The device is designed for easy integration. It is compatible with many other integrated circuits and suitable for mounting on a TO-220P thermal pad. It features a built-in inductor to reduce interference and control EMI. Finally, it also features a built-in thermal shutdown mechanism to protect against excessive temperature.

To summarize, the VS-12CWQ04FNTRHM3 is a versatile semiconductor that is suitable for many applications. It features a wide operating range, high current ratings, excellent device reliability and protection features, and easy integration into most systems. With its excellent power saving and high power density capabilities, the device offers much improved efficiency and performance.

The specific data is subject to PDF, and the above content is for reference

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