Allicdata Part #: | 12FR100IR-ND |
Manufacturer Part#: |
VS-12FR100 |
Price: | $ 3.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 12A DO203AA |
More Detail: | Diode Standard, Reverse Polarity 1000V 12A Chassis... |
DataSheet: | VS-12FR100 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.06615 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.26V @ 38A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 12mA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-203AA |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 12FR100 |
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Diodes, specifically rectifiers, are the most common type of component used in electrical and electronic circuits. A single rectifier is a device used to convert alternating current (AC) to direct current (DC). The VS-12FR100 is a single rectifier designed for high speed and high power output applications.
In general, diodes are constructed from semiconductor materials such as silicon. Single rectifiers are used in applications that require a voltage boost, or to prevent reverse current flow of DC power from a battery or power supply. The VS-12FR100 is a high-speed, high-power single rectifier designed for use in various applications.
The diode itself is constructed from two doped semiconductor materials. The first, a p-type layer, has a surplus of electron carriers, while the second, an n-type layer, has a deficit. These materials are joined together and form a junction. When electricity is applied to the junction, electrons are collected in the n-type layer, creating a potential barrier called a potential valley. When a reverse voltage is applied to the diode, the electrons in the n-type layer recombine, deactivating the potential valley, thus prohibiting current flow.
The VS-12FR100 is designed to provide high speed and high power output while maintaining great efficiency. It is capable of switching at up to 3 kilohertz and can handle continuous forward current of up to 12A with a voltage rating of 100V DC. Its blocking voltage (reverse voltage) rating is also rated up to 100V DC. The reverse recovery time, which is the time required for the diode to switch from conductive to non-conductive states, is rated as low as 50 nanoseconds.
The VS-12FR100 is made to be used in a variety of applications, such as in switching power supplies, battery chargers, motor control systems, and high power automatic industrial control systems. It is designed to reduce voltage drop, eliminating the need for multiple, smaller diodes and saving on space, power, and cost. It is also made with a compact, low profile design for easy installation, allowing it to fit into tight spaces.
The VS-12FR100 is manufactured from high quality materials and it is tested to the highest quality standards to ensure reliable operation and a long life. The wide range of ratings, operating characteristics, and construction make this a great choice for just about any application.
The specific data is subject to PDF, and the above content is for reference
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