VS-12FR120M

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):	1200V
Current - Average Rectified (Io):	12A
Voltage - Forward (Vf) (Max) @ If:	1.26V @ 38A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F:	--
Mounting Type:	Chassis, Stud Mount
Package / Case:	DO-203AA, DO-4, Stud
Supplier Device Package:	DO-203AA (DO-4)
Operating Temperature - Junction:	-40°C ~ 180°C

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Introduction

The VS-12FR120M is a single rectifier diode specifically designed to provide superior rectifying performance in a wide variety of applications where performance, longevity, and dependability are paramount. This device is constructed with a series connection of PN junction diodes, and its output current is limited by the breakdown voltage of the junction. The SOT-223 package of the VS-12FR120M ensures an excellent heat dissipation factor and excellent use of board space.

Application Field

The VS-12FR120M operates effectively as a rectifier diode in a variety of circuit configurations, such as AC-DC power supplies, bridges, inverters, and freewheeling circuits. Its superior rectifying capability and low forward voltage drop make it an excellent choice for power-level switching or RF rectification applications. The VS-12FR120M is also suitable for applications such as fan control, motor controllers, and UPS systems. Due to its high reverse voltage rating and low forward voltage drop, the VS-12FR120M is also an effective protection for voltage-sensitive or low-voltage circuits. With its excellent performance, the VS-12FR120M is also an excellent choice for automotive applications, including battery management systems and power electronics control.The VS-12FR120M is also ideal for a variety of lighting applications, particularly LED lighting. Its superior dynamic characteristics make it ideal for dimming control and other lighting requirements.

Working Principle

The VS-12FR120M is a PN junction diode composed of two conducting layers of semi-conductor material. A single layer of semiconductor material is a P-type material, while the other layer is an N-type material. When the bias voltage is applied to the PN junction, the electrons and holes will be separated at the junction and an electric current will start to flow through the junction. The forward bias voltage causes holes to flow from the N-side to the P-side and the N-side electrons from the P-side to the N-side. This results in the transfer of electrons and holes across the junction, which causes current to flow. This current will increase as the forward bias voltage is increased, up to a certain point. When a reverse bias voltage is applied, the holes in the P-side will be pushed back and the electrons in the N-side will be pulled back, which will stop the current from flowing. The voltage at which the current stops flowing is known as the breakdown voltage of the PN junction, and is an important measure of the diode’s performance.The VS-12FR120M provides superior rectifying performance at a low breakdown voltage, offering excellent use of board space. In addition, the device is designed to provide a low forward voltage drop, which is especially important for applications such as LED lighting and RF rectification.

Conclusion

The VS-12FR120M is an excellent choice for a variety of single rectifier diode applications. It offers superior rectifying performance, low breakdown voltage, and low forward voltage drop, making it an ideal choice for power-level switching, dimming control, and protection of voltage-sensitive circuits. This diode is constructed with two layers of semi-conductor material and operates on the principle of the PN junction. With its excellent performance and low costs, the VS-12FR120M is an economical and reliable solution for many applications.

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