
Allicdata Part #: | VS-15ETH03-1-M3GI-ND |
Manufacturer Part#: |
VS-15ETH03-1-M3 |
Price: | $ 0.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 300V 15A TO262 |
More Detail: | Diode Standard 300V 15A Through Hole TO-262AA |
DataSheet: | ![]() |
Quantity: | 950 |
1 +: | $ 0.67410 |
50 +: | $ 0.57368 |
100 +: | $ 0.47118 |
500 +: | $ 0.38925 |
1000 +: | $ 0.30730 |
Series: | FRED Pt® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 40ns |
Current - Reverse Leakage @ Vr: | 40µA @ 300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262AA |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes - Rectifiers - Single
VS-15ETH03-1-M3 is a high current type 100V Schottky Barrier Rectifier. It has a maximum average forward current of 15A and a maximum peak non-repetitive forward surge current of 120A with 30ns repetitive surge current at 85°C. It also has a high-performance insulation coating on the anode that offers superior erosion and corrosion resistance.
Application Field
VS-15ETH03-1-M3 is an ideal choice for a variety of applications, such as solar panel generation, low voltage power supplies, and motor drives. It is also ideal for applications that require high efficiency levels, such as LED displays, chargers, and converters.
Working Principle
A rectifier is a device used to convert alternating current (AC) input voltage into Direct Current (DC). The VS-15ETH03-1-M3 is a type of rectifier called a Schottky diode. The Schottky diode consists of two terminals (anode and cathode) and works based on the PN junction principle. When the anode is made more positive than the cathode, it allows current to flow in one direction (forward bias) and blocks current flow in the opposite direction (reverse bias).
The principle of operation in the diode is simple – a high concentration of electrons at the N-type region owing to the electron-rich silicon creates a space charge region which acts as a barrier for the passage of inducted current. The current flow is controlled by the diode’s threshold voltage, which can be manipulated depending on the application. The threshold voltage is low when the diode is forward biased and high when reverse biased. In the case of the VS-15ETH03-1-M3, the current is blocked when the cathode is more negative than the anode, and it will allow current to flow in the forward direction when the anode is more positive than the cathode.
The VS-15ETH03-1-M3 device has a Repetitive Peak Reverse Voltage (RPRV) of 100V, indicating the maximum voltage it can handle at the anode in reverse bias. This means that it can handle up to a 100V voltage spike or any change of load greater than its rated current.
Advantages
The main advantage of the VS-15ETH03-1-M3 device is the high efficiency that it offers. The device exhibits a low leakage current up to 10mA, making it an ideal choice for applications that operate with very low input voltages, as well as applications where energy efficiency is of utmost importance. Furthermore, the device offers an excellent surge handling and is also compliant with industry standards.
Disadvantages
The main disadvantage of using the VS-15ETH03-1-M3 device is its cost. Many alternative devices provide a higher cost-to-performance ratio, making the device an unattractive choice for cost-sensitive applications.
Conclusion
The VS-15ETH03-1-M3 is an excellent choice for a variety of applications due to its high-efficiency levels, low leakage, and compliance with industry standards. However, its higher cost compared to other alternative devices makes it an unattractive choice for cost-sensitive applications.
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