VS-15ETX06PBF Allicdata Electronics
Allicdata Part #:

VS-15ETX06PBF-ND

Manufacturer Part#:

VS-15ETX06PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 15A TO220AC
More Detail: Diode Standard 600V 15A Through Hole TO-220AC
DataSheet: VS-15ETX06PBF datasheetVS-15ETX06PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: FRED Pt®
Packaging: Tube 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 15ETX06
Description

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Diodes - Rectifiers - Single

VS-15ETX06PBF is a single-phase ultra-fast silicon rectifier diode. It features high surge current, an ultra-fast soft recovery time, extremely low leakage current and possesses a variety of capabilities that make it suitable for a wide range of applications.

Application Field

VS-15ETX06PBF can be applied to telecommunication systems, AC/DC power supplies, UPS, solar microinverters and a variety of other power management and switching applications. It can also be used for Hot-Swap scenarios, such as load switches, power management circuits and motor control circuits. And it is also suitable for high voltage and high frequency applications.

Working Principle

VS-15ETX06PBF utilizes a high-quality Silicon substrate, that enables up to 20A continuous current per diode. Its low internal thermal resistance has the ability to optimize the diode performance and RMS current, creating the possibility of higher continuous power levels. The chip is also designed with a dual-gate structure, with a central control gate and two side gates, which provides superior control over the current restoration speed. This increased current restoration speed is further enhanced by the presence of a "soft recovery" zone, which needs less energy to recover.

The diode also integrates an ultra-low leakage current function, which fulfills the requirements for applications with high power intensity. Its ultra-low levels of voltage drop and drift, associated with very low reverse recovery time, make it ideal for applications in which fast switching speed is an essential factor.

The specific data is subject to PDF, and the above content is for reference

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