
Allicdata Part #: | VS-15ETX06PBF-ND |
Manufacturer Part#: |
VS-15ETX06PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 15A TO220AC |
More Detail: | Diode Standard 600V 15A Through Hole TO-220AC |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | FRED Pt® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 3.2V @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 32ns |
Current - Reverse Leakage @ Vr: | 50µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 15ETX06 |
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Diodes - Rectifiers - Single
VS-15ETX06PBF is a single-phase ultra-fast silicon rectifier diode. It features high surge current, an ultra-fast soft recovery time, extremely low leakage current and possesses a variety of capabilities that make it suitable for a wide range of applications.
Application Field
VS-15ETX06PBF can be applied to telecommunication systems, AC/DC power supplies, UPS, solar microinverters and a variety of other power management and switching applications. It can also be used for Hot-Swap scenarios, such as load switches, power management circuits and motor control circuits. And it is also suitable for high voltage and high frequency applications.
Working Principle
VS-15ETX06PBF utilizes a high-quality Silicon substrate, that enables up to 20A continuous current per diode. Its low internal thermal resistance has the ability to optimize the diode performance and RMS current, creating the possibility of higher continuous power levels. The chip is also designed with a dual-gate structure, with a central control gate and two side gates, which provides superior control over the current restoration speed. This increased current restoration speed is further enhanced by the presence of a "soft recovery" zone, which needs less energy to recover.
The diode also integrates an ultra-low leakage current function, which fulfills the requirements for applications with high power intensity. Its ultra-low levels of voltage drop and drift, associated with very low reverse recovery time, make it ideal for applications in which fast switching speed is an essential factor.
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