VS-15TQ060-N3

The VS-15TQ060-N3 is a single rectifier diode made primarily for use in medium voltage, moderate to high currents applications. The device is a self-protected rectifier which utilizes an avalanche junction break down at low forward current gate and has a low reverse leakage current and a soft-recovery action. The device has been designed with a guard-ring construction to reduce the effects of overheating and improve thermal resistance.

The VS-15TQ060-N3 is well suited for use in AC to DC rectifier circuits and has a wide range of applications in power supplies, motor control, and energy storage. It can be used in commercial, residential, industrial, and automotive systems. The salient features of this device make it an ideal choice for a wide range of applications.

The VS-15TQ060-N3 features a low forward voltage drop, low on-state voltage, and low reverse current at reverse polarity which make it suitable for high efficiency rectifier systems. The device has an on-state forward voltage drop of 0.7V and a reverse current of 200mA at 125°C. It also features a high temperature capability of 85°C. The device is also highly reliable with an MTBF of 1.5 million hours and an expected service life of 10 to 15 years.

The working principle of the VS-15TQ060-N3 is based on the PN junction which is created when two layers of doped material, one positive and one negative, are joined together. When a forward bias voltage is applied, electrons and holes start flowing through the junction, creating a current. The forward voltage drop across the junction is proportional to the current, and the voltage difference is the on-state voltage drop of the diode. The reverse current through the diode is called the reverse leakage current and is due to the migration of minority carriers from the p-region to the n-region.

The VS-15TQ060-N3 diode is an efficient and reliable power device which can provide a level of protection for other components in a circuit. It is able to withstand significant voltage and current changes without suffering any damage, and can provide a high degree of protection for other components. It is a great choice for applications requiring robust performance in high power circuits.