VS-16CTQ080-N3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

VS-16CTQ080-N3, a low voltage, high current and junction Ultrafast Rectifier Diode, is typically used in discrete and array applications. This diode is ideal for many applications such as automotive, industrial and consumer electronics. The VS-16CTQ080-N3 is designed to provide maximum efficiency with high current and voltage performance.

The working principle of this type of diode is based on the semiconductor physics of electrons. The semiconductor is placed between two electrodes, an anode and a cathode. When a current is passed through the diode, electrons move from the anode to the cathode and current flows. When electrons move from the anode to the cathode, the voltage drop is known as Forward Voltage Drop (VF). This type of diode also has a reverse leakage current which is known as Reverse Current (IR).

In order to achieve a higher current rating, the VS-16CTQ080-N3 is equipped with an advanced packaging technology which ensures an optimized current carrying capacity. This technology also ensures high power dissipation, fast switching speed, lower conduction losses and low reverse leakage current. The chip is designed using an optimized high-voltage silicon technology which allows for an ultrafast response time while providing maximum efficiency.

This type of diode array is used in multiple applications such as AC/DC converters, LED lighting, automotive lighting and uninterruptible power supplies. It also finds application in medical and aerospace products. The high current rating and low switching losses of this diode provides longer transformer life and higher power efficiency. Moreover, its low rectifier junction temperature and reduced power dissipation allows for a better thermal performance.

The VS-16CTQ080-N3 diode array is one of the most efficient solutions for a wide range of application fields. It has been designed with the latest technologies and manufacturing processes to ensure maximum efficiency and reliability. The optimized high-voltage silicon technology allows for ultrafast response time and lower conduction losses, making it a great candidate for many applications.

The specific data is subject to PDF, and the above content is for reference