| Allicdata Part #: | VS-18TQ050PBF-ND |
| Manufacturer Part#: |
VS-18TQ050PBF |
| Price: | $ 0.75 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 50V 18A TO220AC |
| More Detail: | Diode Schottky 50V 18A Through Hole TO-220AC |
| DataSheet: |  VS-18TQ050PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.67349 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 18A |
| Voltage - Forward (Vf) (Max) @ If: | 600mV @ 18A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 2.5mA @ 50V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220AC |
| Operating Temperature - Junction: | -55°C ~ 175°C |
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The VS-18TQ050PBF is a rectifier diode housed in a small surface mount SOD-123 package. It has a low forward voltage drop, making it the ideal choice for power-MOSFET and IGBT gate drive applications. The diode is designed for automatic pick-and-place assembly and offers superior rectification performance for power switch applications.
Application Field
The VS-18TQ050PBF is suitable for switch mode power supplies and MOSFET and IGBT gate drive applications. It is ideally suited to situations where low forward voltage is important, such as in the design of high efficiency switch models. Its low thermal resistance allows it to be used in dual-level rectifiers, making it the perfect choice for high power applications. It is also suitable for use in bridge rectifiers, and can be used in combination with other diodes to create various rectification methods.
Working Principle
The VS-18TQ050PBF works in a similar way to all diode rectifiers. When forward biased, the diode will conduct current, when reverse biased, it will not. In power MOSFET and IGBT gate drive applications, the low forward voltage of the diode is an important factor, since this reduces the power needed to drive the gate. This also increases the efficiency of the device, since less power is dissipated as heat. The low thermal resistance makes this diode ideal for use in dual-level rectifiers, since the heat generated can be quickly dispersed away from the device.
The VS-18TQ050PBF is also well suited for use in bridge rectifiers. When connected in series with other diodes, this diode can be used to form the classic alternating input current to direct output current of a full-wave bridge circuit. Its low forward voltage allows it to be used in both half and full-bridge rectifiers, and its small form factor makes it an attractive choice for circuit boards with limited space.
Conclusion
The VS-18TQ050PBF is an excellent choice for a wide range of rectification applications. Its low forward voltage makes it ideal for use in power switch applications, while its low thermal resistance and small form factor make it the perfect choice for dual-level rectifiers and bridge circuits. Overall, it is an excellent choice for use in power MOSFET and IGBT gate drive applications.
The specific data is subject to PDF, and the above content is for reference
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