VS-1EFH01W-M3-18 Discrete Semiconductor Products |
|
| Allicdata Part #: | VS-1EFH01W-M3-18GITR-ND |
| Manufacturer Part#: |
VS-1EFH01W-M3-18 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 100V 1A SMF |
| More Detail: | Diode Standard 100V 1A Surface Mount SMF (DO-219AB... |
| DataSheet: |  VS-1EFH01W-M3-18 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | FRED Pt® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 930mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 16ns |
| Current - Reverse Leakage @ Vr: | 2µA @ 100V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | SMF (DO-219AB) |
| Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VS-1EFH01W-M3-18 is a rectifier diode device that is used in aspects of switching power and voltage conversion. It is a good choice for applications that require robust performance, high efficiency, and low gate charge. It is also a great device for cost optimization and less space requirements.
The VS-1EFH01W-M3-18 is a single rectifier diode with a voltage range of 1000V, a current rating of 1A, and a low forward voltage drop of 0.55V. It has a fast switching speed of 200V/μs, which is suitable for high-speed switching applications. It also has a typical reverse recovery time of 15ns, which features improved efficiency and reduced losses. The reverse leak current is rated at 50nA, ensuring efficient operation even when in reverse bias.
Due to its high power density and fast switching speed, the VS-1EFH01W-M3-18 is a suitable device for rectification and voltage conversion. It has excellent surge operation characteristics, allowing it to handle high peak voltages without breakdown. In addition, it has a resistance to temperature variations and thermal instability that is suitable for switching power supplies and motor control applications. The VS-1EFH01W-M3-18 is also suitable for LED applications, due to its low forward voltage drop.
The VS-1EFH01W-M3-18 utilizes a complicated process involving the application of a barrier layer between two separate diodes in a single substrate. This process improves the current carrying capability of the diode, and also allows for improved heat conduction from the junction to the package. This further improves the overall efficiency of the device and allows it to be used in high-power applications.
The VS-1EFH01W-M3-18 device is the ideal solution for applications where high power efficiency, high power density, and low gate charge are required. Its suitable in applications such as switching power supplies, motor control, and LED lighting. Due to its fast switching speed, high power density and efficiency, many industries have adopted the device in their applications.
The specific data is subject to PDF, and the above content is for reference
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...