
Allicdata Part #: | VS-1N3673A-ND |
Manufacturer Part#: |
VS-1N3673A |
Price: | $ 4.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 12A DO203AA |
More Detail: | Diode Standard 1000V 12A Chassis, Stud Mount DO-20... |
DataSheet: | ![]() |
Quantity: | 78 |
1 +: | $ 4.19580 |
10 +: | $ 3.79134 |
100 +: | $ 3.13916 |
500 +: | $ 2.73352 |
1000 +: | $ 2.38081 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 12A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 600µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-203AA |
Operating Temperature - Junction: | -65°C ~ 200°C |
Base Part Number: | 1N3673 |
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Single rectifier elements are among the most commonly used electrical components in today\'s world. The VS-1N3673A is an ideal device for moderate-current uses and is increasingly being used in a variety of applications. This article explores the VS-1N3673A\'s application fields and working principle.
Application Areas
The VS-1N3673A can be used in all types of applications that require rectification from AC input to DC output. This includes conversion of AC line voltage to DC, bridging applications, power supplies and automotive power systems. Its 6.4 A forward current, 400 PIV reverse voltage, and total power dissipation of 9 watts makes it suitable for a variety of applications.
The VS-1N3673A is particularly suited for applications that require moderate levels of current draw. For example, in power supplies, the device can be used to successfully bridge alternating current (AC) and direct current (DC) connections, allowing for efficient power delivery. In automotive applications, the device is used to provide DC power, usually to electronics such as lights, radios, and other accessories.
The device is also suitable for applications that may require a lower forward current rating but require a physically larger body and/or higher wattage rating than other rectifier diode components. The VS-1N3673A\'s body size and wattage rating make it ideal for use in space-limited designs and applications requiring high power levels.
Working Principle
The VS-1N3673A is a single-phase rectifier diode with a high forward current rating and a total power dissipation of 9 watts. The component is constructed of a silicon junction that is formed by two chemically opposite semiconductor materials. One "doping" material forms the anode, and the other doping material forms the cathode. The anode is attached to a post or pin on the device\'s body, and the cathode is attached to a second post or pin that is located on the component\'s opposite side.
When an alternating current (AC) signal is applied to the component, a voltage differential is created across the P-N silicon junction. This voltage differential causes a "diode drop," meaning that the device only allows current flow in one direction. The effect of this diode drop is that when AC is applied, the resulting current output is DC voltage. The component also has inherent reverse voltage protection, which helps to limit the amount of voltage that can pass through the device in reverse.
The VS-1N3673A also features an over-current protection circuit. If a given input current exceeds the rated levels, the device will shut down and the current will bypass the component. This circuit helps protect the device and other connected components from damage due to overcurrent.
Conclusion
The VS-1N3673A is a single-phase, rectifier diode with a high forward current rating and total power dissipation of 9 watts. Due to its size and current ratings, it is well suited for moderate-current applications. Usages include conversion of AC to DC, bridging applications, power supplies, and automotive power systems. The device is constructed of two opposing semiconductor materials and employs a diode drop and reverse current protection. Lastly, an over- currents protection circuit helps protect the device and other components from damage due to over-current.
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