VS-20CTH03SPBF

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VS-20CTH03SPBF is a type of Rectifier Arrays designed for use in Automotive applications, such as Engine Management, Vehicle Control and ECUs. It can handle high DC voltages of up to 50 V, with peak forward surge currents of up to 1.6 A. This device features an integrated Schottky barrier diode (SBD) architecture, specifically designed to provide a low forward voltage drop and low capacitance. It is also capable of carrying larger current than other rectifier arrays.

The VS-20CTH03SPBF Rectifier Array is a compact and versatile device, permitting the implementation of designs that eliminate the need for wire harnesses and soldering of multiple components. It is capable of providing reverse blocking and bidirectional current flow in both directions. The device requires a minimum operating temperature of - 40 °C, and a maximum of 150 °C. The package is also ESD-protected and compliant with AEC-Q101 production Part Stress Test Qualification requirements.

The diode array features an integrated Schottky barrier diode (SBD) architecture. The SBD structure reduces forward voltage drop and capacitance, and is designed for high efficiency. This device also offers bidirectional current-blocking capability, providing protection against reverse currents. Additionally, the integrated device delivers better performance than other diodes-on-chip designs, including low forward voltage leakage current and high reverse voltage breakdown capability.

The working principle of the VS-20CTH03SPBF Rectifier Array is based on the P-N junction diode. The diode is formed from two different regions of semiconductor material, one with an excess of negative charge carriers (electrons) and the other with an excess of positive charge carriers (holes). When the diode is exposed to an external voltage, current can flow in one direction (forward bias), but not in the opposite direction (reverse bias).

The VS-20CTH03SPBF diodes are designed to provide a high-efficiency solution for automotive applications, due to the low forward voltage drop and low capacitance, with the ability to carry larger currents. The internal diode architecture allows for bidirectional current-blocking, which provides additional protection against reverse current. Furthermore, the device is ESD-protected, and is compliant with AEC-Q101 Qualification requirements.

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