| Allicdata Part #: | VS-20ETF02SPBFGI-ND |
| Manufacturer Part#: |
VS-20ETF02SPBF |
| Price: | $ 3.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 20A TO263 |
| More Detail: | Diode Standard 200V 20A Surface Mount TO-263AB (D²... |
| DataSheet: |  VS-20ETF02SPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 2.75310 |
| 10 +: | $ 2.49669 |
| 25 +: | $ 2.37157 |
| 100 +: | $ 2.08341 |
| 250 +: | $ 1.98732 |
| 500 +: | $ 1.80482 |
| 1000 +: | $ 1.55509 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Discontinued at Digi-Key |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 20A |
| Voltage - Forward (Vf) (Max) @ If: | 1.67V @ 60A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 160ns |
| Current - Reverse Leakage @ Vr: | 100µA @ 650V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB (D²PAK) |
| Operating Temperature - Junction: | -40°C ~ 150°C |
| Base Part Number: | 20ETF02 |
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The VS-20ETF02SPBF is a diode rectifier designed for use in power applications requiring up to 20A of current. It is a single-phase, high-efficiency, surface-mount device that uses a zener injection doping technique. The device offers fast switching times, low power dissipation, and high stability. The VS-20ETF02SPBF is suitable for use in various electronic applications, including automotive, industrial, and military applications.
The VS-20ETF02SPBF has a simple structure, a proven design and a low voltage drop and a fast reverse recovery time. It is also equipped with high frequency characteristics and improved efficiency. The device is constructed with a N-channel insulated gate bipolar transistor (IGBT) and a PN junction with an optimized doping profile.
The operation of the VS-20ETF02SPBF is based on the principle of rectification. When a voltage (AC or DC) is applied across the PN junction, the current across the junction will be limited to its forward bias. This reduces the power dissipation of the device and increases its efficiency. The current across the junction is then rectified and converted into a DC current.
The VS-20ETF02SPBF is an ideal solution for applications requiring high power efficiency, fast switching times and high stability. The device is designed to provide maximum performance and is suitable for home and automotive applications. The VS-20ETF02SPBF is also compliant with AEC-Q101 and MOSFET requirements. In addition, the device offers excellent durability, especially in high temperatures.
In conclusion, the VS-20ETF02SPBF is ideal for power applications requiring up to 20A of current. It offers fast switching times, low power dissipation and high stability. It has a simple structure, a proven design and a fast reverse recovery time. The device also complies with AEC-Q101 and MOSFET requirements and offers excellent durability. It is suitable for automotive, industrial and military applications.
The specific data is subject to PDF, and the above content is for reference
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