
Allicdata Part #: | VS-245NQ015PBF-ND |
Manufacturer Part#: |
VS-245NQ015PBF |
Price: | $ 16.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 15V 240A D-67 |
More Detail: | Diode Schottky 15V 240A Chassis Mount D-67 |
DataSheet: | ![]() |
Quantity: | 1000 |
20 +: | $ 14.78930 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 15V |
Current - Average Rectified (Io): | 240A |
Voltage - Forward (Vf) (Max) @ If: | 520mV @ 240A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 80mA @ 15V |
Capacitance @ Vr, F: | 15800pF @ 5V, 1MHz |
Mounting Type: | Chassis Mount |
Package / Case: | D-67 HALF-PAK |
Supplier Device Package: | D-67 |
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The VS-245NQ015PBF is a rectifier diode with extended temperature range from -65°C to 175°C. This type of diode is generally used as a voltage clamp in order to protect sensitive electronics from high voltage transients. Due to the structure of the diode, it can be used for both forward and reverse biasing, which makes it suitable for a variety of applications.
The VS-245NQ015PBF comprises of an anode, a cathode and a metal oxide semiconductor (MOS) connected in series between the anode and the cathode. The diode is mainly made up of zinc oxide and tin oxide layers, which are used to provide the electrical connection between the anode and cathode. The MOS layer is made of a compound of iron, aluminum, and nitrogen, which exhibits low-level conduction when the potential between the anode and the cathode reaches a certain voltage. This compounds allows the device to condition low-level signals.
The application field of the VS-245NQ015PBF is mainly in low-voltage battery charger and voltage regulator systems. The diode can also be used in systems that require transient protection, such as data transmission lines. Its wide temperature range and low-level conduction characteristics make it suitable for use in high-temperature environments, such as in extreme weather or rugged terrain.
The working principle of the VS-245NQ015PBF is based on the reverse breakdown voltage. When the voltage between the cathode and anode reaches the breakdown voltage; the conductivity increases, thus allowing current to flow in reverse direction. The diode then clamps the voltage at the peak breakdown voltage level. This prevents high voltage transient from reaching delicate electronic circuits.
In conclusion, the VS-245NQ015PBF is a robust rectifier diode with extended temperature range, which makes it suitable for use in extreme temperatures. It is mainly used as a voltage clamp in order to protect sensitive electronics from high voltages and also to condition weak signals. This diode has a wide range of applications in low-voltage battery charger and voltage regulator systems, data transmission lines and more. Its working principle is based on the reverse breakdown voltage and the low-level conduction characteristics allow it to clamp voltage at a certain peak level.
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