VS-249NQ150PBF Allicdata Electronics
Allicdata Part #:

VS-249NQ150PBF-ND

Manufacturer Part#:

VS-249NQ150PBF

Price: $ 31.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 150V 240A HALFPAK
More Detail: Diode Schottky 150V 240A Chassis Mount HALF-PAK
DataSheet: VS-249NQ150PBF datasheetVS-249NQ150PBF Datasheet/PDF
Quantity: 25
1 +: $ 28.65240
10 +: $ 26.73410
100 +: $ 23.21200
Stock 25Can Ship Immediately
$ 31.52
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 1.21V @ 240A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 6mA @ 150V
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes - Rectifiers - Single: VS-249NQ150PBF Application Field and Working Principle

VS-249NQ150PBF is a type of single rectifier diode, and it is the third generation of voltage regulator diode. It is used in an array of commercial and industrial applications that require higher voltages with lower current. Its application field includes industrial rectification, power conversion, and power management. Its working principle is based on a reverse voltage phenomenon, wherein an electric current passes in only one direction. This ensures that the device performs rectification accurately and won’t be susceptible to any form of voltage fluctuations. Furthermore, it is designed with 150PBF smob, which helps dissipate the heat and keep it safely enclosed in the device.

The VS-249NQ150PBF is composed of a tiny semiconductor element that functions as its active component. It contains a “p” and “n” type semiconductor materials which are combined together and form a silicon-doped layer. This layer forms a diode-like junction between them and therefore, an electric current can only flow in the direction from the “p” type silicon to the “n” type one. This makes the diode a forward-biased. When this current flows, the voltage drop across the device is increased. This increase in voltage is referred to as the reverse bias.

Like other diodes, the VS-249NQ150PBF is also operated in the reverse current mode. A reverse current is developed when the voltage across the diode exceeds its rated reverse bias voltage. This excess in reverse current can cause excessive heating up of the diode and damage it permanently. To prevent this, a thermally-applied protective coating is applied over the edges of the diode. This coating helps dissipate heat and regulate its temperature. Furthermore, the VS-249NQ150PBF also has a SIP package, which ensures that the pinout remains intact during installation and ensures efficient conduction.

The VS-249NQ150PBF is ideal for applications requiring high voltage and low current. This makes it perfect for power conversion, battery charging systems as well as solar cell and wind energy applications. Its features also make it a great choice for ground loops, rectification, H-bridge configurations, and power management systems. It also provides excellent noise immunity, ensuring that the current flow is free of any surges. Its SIP package and 150PBF smob further help protect the device and seamlessly connect it to other components.

To conclude, the VS-249NQ150PBF is a type of single rectifier diode that is extensively used in applications requiring higher voltages with lower current. It is designed with a “p” and “n” type semiconductor material, which helps it perform rectification accurately. Furthermore, its SIP package and 150PBF smob ensure efficient thermal protection. This makes the diode highly suitable for power conversion, battery charging systems as well as solar cell and wind energy applications.

The specific data is subject to PDF, and the above content is for reference

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