| Allicdata Part #: | VS-25ETS08STRL-M3-ND |
| Manufacturer Part#: |
VS-25ETS08STRL-M3 |
| Price: | $ 1.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 800V 25A TO263AB |
| More Detail: | Diode Standard 800V 25A Surface Mount TO-263 (D2Pa... |
| DataSheet: |  VS-25ETS08STRL-M3 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.94902 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 800V |
| Current - Average Rectified (Io): | 25A |
| Voltage - Forward (Vf) (Max) @ If: | 1.14V @ 25A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 100µA @ 800V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D2Pak) |
| Operating Temperature - Junction: | -40°C ~ 150°C |
Description
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VS-25ETS08STRL-M3 Application Field and Working Principle
Diodes - Rectifiers - SingleA VS-25ETS08STRL-M3 is an advanced type of semiconductor device, commonly known as a power semiconductor or power MOSFET. It is a low-power rectifier with a voltage and current rating of 25V and 8A respectively. This device is designed and manufactured using advanced chip technology and features excellent performance in terms of switching speed, switching loss, noise, and stability. It is widely used in applications such as low-power rectification, switching regulators, and power converters.This device is composed of four components: a substrate, a gate, drain, and source. The substrate is made of a P-type epoxy board and is the base on which all other components are formed. A gate layer is then deposited onto the substrate and is composed of poly-crystalline silicon. The gate controls the current flow and dictates the functional behavior of the semiconductor device. The drain and source layers are then constructed on the gate layer and are composed of poly-crystalline silicon, aluminum, and gold.The VS-25ETS08STRL-M3 features a low-voltage, high-switching frequency, and low-switching loss operation. It can operate at a temperature range of 0° to 70°C. The device also features a low forward voltage of 0.6V. This low forward voltage enables the device to offer higher efficiency at lower power dissipation compared to other similar rectifiers. The device also features excellent protection against pin-to-pin breakdown when subjected to high-voltage load currents.The working principle of the VS-25ETS08STRL-M3 is similar to that of other contemporary rectifiers. The device functions by allowing the current to flow through it in one direction while preventing it from flowing in the opposite direction. This is achieved by allowing positive charges to pass through the circuit while blocking negative charges. When the+ve current carriers reach the drain, they get absorbed and flow out while the –ve current carriers are blocked and do not pass. As a result, the device blocks any backflow of electrons preventing a reverse current flow.Overall, the VS-25ETS08STRL-M3 is a low-power rectifier which offers excellent performance for a wide variety of applications. Its power efficiency, low forward voltage, and high switching frequency make it a great choice for efficient and reliable rectification.The specific data is subject to PDF, and the above content is for reference
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