Allicdata Part #: | VS-25ETS08STRR-M3-ND |
Manufacturer Part#: |
VS-25ETS08STRR-M3 |
Price: | $ 0.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 25A TO263AB |
More Detail: | Diode Standard 800V 25A Surface Mount TO-263 (D2Pa... |
DataSheet: | VS-25ETS08STRR-M3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.84344 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 25A |
Voltage - Forward (Vf) (Max) @ If: | 1.14V @ 25A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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A VS-25ETS08STRR-M3 is a rectifying diode technically classified as a single type. In this type of diode, the flow of current is restrained in just a single direction. As its name can suggest, the VS-25ETS08STRR-M3 diode is able to handle 25V of reverse voltage, as a result of which its application fields are also multiple.
Applications of VS-25ETS08STRR-M3
VS-25ETS08STRR-M3 is ideal for general purpose rectification applications which require the 25V of reverse blocking voltage. This allows the diode to be used in a variety of scenarios, depending on the user’s need ranging from switching over military and commercial grade systems to to other general applications.
- The diode comes in handy when used for switching over military grade communication systems as well as navigation and navigation control systems.
- It is great for rectifying signals in small low powered amplifiers and audio adaptors, as well as adapters.
- As is the case with the single type of diodes, the VS-25ETS08STRR-M3 can be used to create a solid-state buck or boost converter, providing a steady output voltage under considerable changes in input voltage.
- It is also ideal for domestic applications like in surge protectors, throughout circuit protection, and in power supplies.
Working Principle of VS-25ETS08STRR-M3
The VS-25ETS08STRR-M3 diode works on the concept of PN junctions, typically found in a semi-conducting material such as germanium or silicon. The diode PN junction is formed when one type of doped semi-conducting material is adjacent to another type with equally different properties. On one side (anode) of this junction, electrons are donated and on the other side (cathode), electrons are accepted.
When an external voltage is applied to the junction, one of the two components (holes or electrons) crosses the barrier to the other side and therefore produces an electric current. This makes the diode to react as an open switch while the flow of current is in the same direction as the applied voltage and an open circuit when the direction is changed.
By simulating the amount of electrons that leave the PN junction, the diode is capable of changing the amount of current passing through the interval. This is what makes it capable of regulating the amount of electricity passing in and out of the junction, as well as preventing reverse current flow in the opposite direction.
Conclusion
The VS-25ETS08STRR-M3 diode is a special type of single rectifier diode that features a 25V of reverse voltage and a wide range of applications. From controlling the current flow in military grade communication systems to general applications such as in power supplies and surge protectors, it is a valuable asset. It works on the principle of PN junction which relies on the application of external voltage to allow the flow of electric current between the two components.
The specific data is subject to PDF, and the above content is for reference
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