VS-25TTS08STRRPBF Allicdata Electronics
Allicdata Part #:

VS-25TTS08STRRPBF-ND

Manufacturer Part#:

VS-25TTS08STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: SCR 800V 25A D2PAK
More Detail: SCR 800V 25A Standard Recovery Surface Mount TO-26...
DataSheet: VS-25TTS08STRRPBF datasheetVS-25TTS08STRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - On State (It (RMS)) (Max): 25A
Supplier Device Package: TO-263AB (D²PAK)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - Off State (Max): 500µA
Current - Hold (Ih) (Max): 150mA
Series: --
Current - On State (It (AV)) (Max): 16A
Voltage - On State (Vtm) (Max): 1.25V
Current - Gate Trigger (Igt) (Max): 45mA
Voltage - Gate Trigger (Vgt) (Max): 2V
Voltage - Off State: 800V
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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A thyristor, also known as a silicon-controlled rectifier (SCR), is a three-terminal, electronic semiconductor switch that can be used to regulate the flow of electrical current. The VS-25TTS08STRRPBF is an SCR, macromolecular TRAPATT-selective unipolar thyristor with a blocking voltage of 8 V and a maximum current of 25 A. This device is excellent for use in automotive, industrial and consumer applications.

Application Field

The VS-25TTS08STRRPBF is a general-purpose thyristor and can be used in a wide range of applications, such as motor control, lighting control, power supplies, remote sensing, aerospace applications and more. The device offers a low on state resistance of 17 mΩ, low stand-off voltage, surge current capability of 1.5 A and a low thermal resistance of 0.33 K/W.

Working Principle

The working process of an SCR is based upon the flow of holes and electrons in one direction. A basic SCR quantum consists of two p-n junctions that are placed in parallel. When the device is in blockade (or off state), the p-n junctions are reverse biased and no current flows through the device. When the device is triggered with a pulse with the correct phase and polarity, the p-n junctions are switched to a “on state” and a large current can flow through the device. The device can be switched off again by removing the trigger pulse.

A thyristor is well suited for applications where fast switching and long on/off switching times are required. Additionally, the VS-25TTS08STRRPBF is designed to meet the needs of applications in those industries that require highly reliable and robust solutions. The device is protected against environmental conditions such as moisture, shock, vibration and thermal stress.

The specific data is subject to PDF, and the above content is for reference

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