
Allicdata Part #: | VS-2EFH01HM3/I-ND |
Manufacturer Part#: |
VS-2EFH01HM3/I |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 2A DO219AB |
More Detail: | Diode Standard 100V 2A Surface Mount DO-219AB (SMF... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.06455 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 16ns |
Current - Reverse Leakage @ Vr: | 2µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | DO-219AB (SMF) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The VS-2EFH01HM3/I is a single diode rectifier with a current rating of 1A. It is a fast, efficient and highly reliable semiconductor device that is typically used in switchmode power supplies, converters and rectifiers. The device\'s two metal terminals are connected to the anode and cathode of the diode respectively. It has several features such as low forward voltage drop, low reverse leakage current, low capacitance and low operating temperature.
The VS-2EFH01HM3/I has a Forward Voltage Drop (Vf) of 1.2V at 25℃ and its Reverse Current Leakage parameter (Ir) is 0.3 μA at 25℃. It has a capacitance (C) of 4 nF. It has a range of operating temperatures from -55°C to 150°C. It is available in the TO-220 and SOT-23 packages. The device is also RoHS-compliant.
The VS-2EFH01HM3/I finds application in switchmode power supplies, solar converters and rectifiers, as well as in other power-conversion circuits for AC/DC and DC/DC applications. It is a single-phase rectifier that offers low resistance and efficient energy-saving performance. The device\'s low forward voltage drop provides improved efficiency and lower power losses. It is also suitable for high-temperature operation and can operate in ambient temperatures up to 150°C.
The VS-2EFH01HM3/I operates according to the principles of P-N junction diode or rectifier. When a positive voltage is applied to the anode, current flows through the diode as the P-N junction becomes forward-biased. As a result, the junction provides a low resistance path for current to flow from the anode to the cathode. When the voltage is reversed, the diode stops current flow, as the junction switches from forward-biased to reverse-biased, hence the term \'rectifier\'.
In summary, the VS-2EFH01HM3/I is a single diode rectifier that features a forward voltage drop of 1.2V, a reverse current leakage of 0.3 μA, and a capacitance of 4 nF. It is suitable for use in AC/DC and DC/DC conversion circuits, solar converters and rectifiers, and other high-temperature switchmode power supplies. Its low forward voltage drop helps to reduce power losses and improve efficiency, while its high operating temperature range of -55°C to 150°C makes it suitable for a variety of applications.
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