| Allicdata Part #: | VS-307UR200-ND |
| Manufacturer Part#: |
VS-307UR200 |
| Price: | $ 63.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GP 2KV 330A DO205AB |
| More Detail: | Diode Standard, Reverse Polarity 2000V 330A Stud M... |
| DataSheet: | VS-307UR200 Datasheet/PDF |
| Quantity: | 1000 |
| 12 +: | $ 57.15410 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max): | 2000V |
| Current - Average Rectified (Io): | 330A |
| Voltage - Forward (Vf) (Max) @ If: | 1.46V @ 942A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Stud Mount |
| Package / Case: | DO-205AB, DO-9, Stud |
| Supplier Device Package: | DO-205AB, DO-9 |
| Operating Temperature - Junction: | -40°C ~ 180°C |
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.Diodes are widely used electronic components. Their principal function is to allow electrical current to flow in one direction only. Rectifier diodes, specifically, can either be used for switching, rectification, or as a voltage regulator. The VS-307UR200 falls into the category of single-phase rectifier devices; hence, it can be used to power a variety of devices with AC or DC voltage.
The VS-307UR200 is a special single-phase rectifier diode, with a surge current rating of up to 200A (at 20°C). It features a robust construction made of a special wafering process and is designed to offer excellent voltage and frequency stability. Specifically, the external MOS structure of the device ensures a high thermal cycling performance and a maximum junction temperature of 115°C, making it suitable for various high power applications.
The working principle for the VS-307UR200 involves using an external MOS thin-film device, which was fabricated using a special wafering process. This method allows for higher reliability, shorter current conduction paths, and faster switching operation, in comparison to conventional silicon-based rectifier diodes. When the external MOS thin-film device is triggered, the pulse drives the P-N junction of the device and causes a forward current flow. This allows for an output current that is three times higher than that of a conventional diode.
Given the VS-307UR200\'s exceptional current, temperature, and surge capability ratings – along with its fast switching speed – it is widely used in various high power applications. Examples include solar energy conversion systems, domestic appliances, automotive motors and alternators, or any application requiring a sound power supply.
The VS-307UR200\'s robust construction and superior performance characteristics make it an ideal choice for various applications. From lighting, charging, power conditioning systems that use sensitive load switching, to domestic appliances and industrial vehicle motors, the device delivers high-quality results while saving energy and offering superb system reliability.
The specific data is subject to PDF, and the above content is for reference
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VS-307UR200 Datasheet/PDF