VS-30CPQ100-N3 Allicdata Electronics
Allicdata Part #:

VS-30CPQ100-N3GI-ND

Manufacturer Part#:

VS-30CPQ100-N3

Price: $ 4.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 100V TO247
More Detail: Diode Array 1 Pair Common Cathode Schottky 100V 30...
DataSheet: VS-30CPQ100-N3 datasheetVS-30CPQ100-N3 Datasheet/PDF
Quantity: 215
1 +: $ 3.68550
25 +: $ 3.12757
100 +: $ 2.71051
500 +: $ 2.30741
1000 +: $ 1.94601
Stock 215Can Ship Immediately
$ 4.06
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 550µA @ 100V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Base Part Number: 30CPQ100
Description

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Diodes are semiconductor devices that allow an electric current to pass in one direction while obstructing the flow of current in the opposite direction. Rectifiers are components that use diodes to convert AC power into DC power. Arrays are specialized rectifiers that combine packages of two or more individual rectifiers into a single, compact package to optimize power applications. A VS-30CPQ100-N3 is a type of rectifier array designed for DC-to-DC conversion applications, such as power management in portable and mobile personal devices, automotive systems, and many other electronics components.

The VS-30CPQ100-N3 is a surface-mountable, insulated-gate bipolar transistor (IGBT)-based rectifier package. Inside the package are two direct-on-chip (DOC) isolated power MOSFETs, each having 2x the drain to source current of a conventional MOSFET device. This array offers higher power density, faster switching, and improved thermal characteristics compared to conventional rectifiers, thus allowing it to be used in high-current, high-temperature applications. It has an operating temperature range of -55 degrees Celsius to 150 degrees Celsius, allowing it to be used in a wide range of environments and conditions.

The inner structure of the VS-30CPQ100-N3 is designed to be flexible and adjustable to suit various power applications. Its structure consists of two isolated MOSFETs, a source pin and a drain pin, and two gate pins. The source pin is connected to the source of both MOSFETs and acts as the input in a DC-DC conversion system while the drain pin is used as the output. In between the source and drain pins is a pair of gate pins, which are used to control the switching of the MOSFETs, allowing for adjustable current regulation.

The VS-30CPQ100-N3 can be used to convert an unregulated DC input voltage into a regulated, low ripple-noise DC output voltage. It works by having the MOSFETs switch on and off in sequence, controlling the amount of current that flows through the source and drain pins. When the MOSFETs are in the ‘on’ state, current flows into the source and out of the drain. When they are in the ‘off’ state, no current flows. The switching action can be adjusted to change the amount of current flowing and thus change the output voltage. Because the device is insulated, it allows for a better regulation of the output voltage than an open-frame device.

The VS-30CPQ100-N3 can be used in a wide variety of power applications, from power management in portable and mobile devices, to automotive systems and many other electronic components. It is a highly reliable component due to its temperature-resistant structure, high power density, and adjustable switching action. With its compact design, it is ideal for applications that have space constraints and require a high-performance rectifier array.

The specific data is subject to PDF, and the above content is for reference

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