Allicdata Part #: | VS-30EPU12LHN3-ND |
Manufacturer Part#: |
VS-30EPU12LHN3 |
Price: | $ 1.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.2KV 30A TO247AD |
More Detail: | Diode Standard 1200V 30A Through Hole TO-247AD |
DataSheet: | VS-30EPU12LHN3 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.15300 |
Specifications
Series: | Automotive, AEC-Q101, FRED Pt® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 2.68V @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 220ns |
Current - Reverse Leakage @ Vr: | 145µA @ 1200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AD |
Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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.()VS-30EPU12LHN3 Diodes - Rectifiers - Single Overview and Working Principle
The VS-30EPU12LHN3 is a single-phase rectifier diode from Vishay Intertechnology. It is a surface-mount diode designed to provide a highly efficient solution for various applications in the aerospace, defense, automotive, communications, and medical fields.The VS-30EPU12LHN3 provides an avalanche energy capability up to 548 mJ, outstanding surge current capabilities up to 130A, and a peak forward blocking voltage of up to 15 kV. Its unique design enables it to provide excellent thermal management and minimal noise levels.Its features make it ideal for a variety of different power electronics applications such as dc-dc converters, solar inverters, and uninterruptible power supplies. Additionally, its low leakage current of up to 4nA and its low capacitance of 70pF at 4V make it suitable for high-frequency applications. Moreover, its maximum junction temperature of 175°C enables reliable operation in the harshest of environments.The VS-30EPU12LHN3 is a three-terminal active device composed of a PN junction. It is constructed of an anode, a cathode, and a control or gate terminal. When considering a rectifier diode, the negative voltage on the anode is assumed to be “0” and the control terminal is assumed to be 0V.When the anode voltage is 0V, the diode is said to be “off.” In this state, the diode offers a high resistance in the forward direction and virtually no current passes through the diode. When the anode voltage is higher than 0V, the diode turns “on” and current can flow from anode to cathode. In this state, the diode offers a low resistance in the forward direction and a much higher resistance in the reverse direction. This allows for the efficient blocking of reverse current.The characteristic features of the VS-30EPU12LHN3 make it an ideal choice for a variety of applications. Its high surge current capability and wide operating temperature range enable reliable operation in harsh conditions. Its low capacitance and leakage current allow for its use in high-frequency applications. Its avalanche energy capability and peak forward blocking voltage allow for exceptional protection in power-switching applications. In conclusion, the VS-30EPU12LHN3 is a single-phase rectifier diode designed for high-power and high-frequency applications. Its features make it ideal for a variety of industrial applications, including dc-dc converters, solar inverters, and uninterruptible power supplies. Additionally, its high avalanche energy capability, low leakage current, and high surge current capability allow for reliable operation in the harshest of environments.The specific data is subject to PDF, and the above content is for reference
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