VS-30WQ04FNTRL-M3 Allicdata Electronics
Allicdata Part #:

VS-30WQ04FNTRL-M3-ND

Manufacturer Part#:

VS-30WQ04FNTRL-M3

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY DPAK
More Detail: Diode Schottky 40V 3.5A Surface Mount D-PAK (TO-25...
DataSheet: VS-30WQ04FNTRL-M3 datasheetVS-30WQ04FNTRL-M3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.15836
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Description

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VS-30WQ04FNTRL-M3 application field and working principle

VS-30WQ04FNTRL-M3 is a single rectifier diode, which has a wide range of applications in the semiconductor industry. This diode is typically used for applications such as photovoltaic (solar) cells, DC-DC converters, power supplies, motor drives, and other high voltage and power electronics projects. It can also be used for general purpose small-signal rectification and low-voltage power circuits.

Working Principle

The basic working principle of the VS-30WQ04FNTRL-M3 rectifier diode is found in its construction. It is constructed of a single rugged PN junction, where the majority charge carriers are managed by a semiconductor material. The majority current flow and voltage drop are mostly determined by the doping level of the semiconductor. When a voltage is applied to the diode, it starts acting as a forward-biased device. A forward bias causes current to flow through the diode without being affected by the reverse voltage. This forward bias is known as the forward breakdown voltage and it is an important parameter for the selection or design of power circuits using the VS-30WQ04FNTRL-M3 diode. The forward voltage also determines the maximum voltage that the diode can support before breaking down.

Features

The VS-30WQ04FNTRL-M3 diode has a low forward voltage drop, fast switching speed and extremely low reverse leakage current. It also provides tight reverse breakdown voltage and low thermal resistance, which makes it suitable for high-speed and high-current applications. Additionally, it has low capacitance and good ESD performance which make it especially good for high-frequency and RF applications.

Applications

VS-30WQ04FNTRL-M3 diodes are widely used in various power management and energy conversion applications. These include solar cell inverters, DC-DC converters, power supplies and motor drives. The diode can also be used in low voltage and small signal rectification applications. Due to its high power capabilities, the VS-30WQ04FNTRL-M3 diode is often used in battery chargers, inverters, UPS and other high power applications.

Conclusion

The VS-30WQ04FNTRL-M3 single rectifier diode is a versatile device with a wide range of applications for the power electronics industry. It has low forward voltage drop, fast switching speed, low leakage current and low thermal resistance. Additionally, it has a tight reverse outbreak voltage and excellent ESD performance. These features make the diode an ideal choice for high-current, high-frequency and RF applications.

The specific data is subject to PDF, and the above content is for reference

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