Allicdata Part #: | VS-30WQ10FNTRLHM3-ND |
Manufacturer Part#: |
VS-30WQ10FNTRLHM3 |
Price: | $ 0.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY DPAK |
More Detail: | Diode Schottky 100V 3.5A Surface Mount D-PAK (TO-2... |
DataSheet: | VS-30WQ10FNTRLHM3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.46214 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3.5A |
Voltage - Forward (Vf) (Max) @ If: | 810mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 100V |
Capacitance @ Vr, F: | 92pF @ 5V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Diodes are known as the most fundamental electronics components, providing the most basic switching and rectifying functionality. In this article, we\'ll have a look at the application field and working principle of the VS-30WQ10FNTRLHM3, a prominent diode in the industry.
Application Field of VS-30WQ10FNTRLHM3
The VS-30WQ10FNTRLHM3 is a single, 650V Schottky Barrier Rectifier. With a Tj maximum of 175, it is suitable for medium power applications up to 12A. It is mainly used in switched-mode power supplies (SMPS), general-purpose rectification, and free-wheeling circuits. Because it is a Schottky type, the maximum available current is lower than other rectifier diodes, but its forward voltage drop is greatly reduced, so it can provide better efficiency than other rectifier diodes.
Its main features are low forward voltage drop (Vf of 0.50V at IF= 10A), high efficiency, low power loss, high temperature performance and high reliability. The soft reverse recovery characteristic makes it suitable for use in applications where low switching losses are desirable. It is a low-cost, low-power diode that is suitable for a large range of rectifier and switch-mode applications.
Working Principle of the VS-30WQ10FNTRLHM3
Basically, rectifier diodes are two-terminal semiconductor devices, typically constructed with a p-n junction. When an electric current is passed through a diode, the p-type side is negatively charged and thus acts a ‘valve’, allowing the current to flow in only one direction without it being able to pass through the other way to the n-type side. This one-way flow of electric current is referred to as rectification.
The diode structure of the VS-30WQ10FNTRLHM3 is slightly different from the traditional p-n junction rectifier (PNJ) diode. It uses a Schottky Barrier, which consists of a p-n junction formed between a metal electrode and a semiconductor, instead of a traditional p-n junction. The Schottky Barrier creates a reverse bias across the junction and therefore reduces the forward voltage drop of the diode, making it capable of handling higher currents than standard rectifier diodes.
The VS-30WQ10FNTRLHM3 is designed to provide current conduction and a high degree of rectification efficiency in any diode application. It is a relatively low power diode and can handle up to 10A with a maximum forward voltage drop of 0.50V. It has a reverse recovery time of 80ns, which is significantly faster than other types of rectifier diodes, making it ideal for high-speed switching applications.
Conclusion
The VS-30WQ10FNTRLHM3 is a single, 650V Schottky Barrier Rectifier, which is mainly used in medium power applications up to 12A, such as switched-mode power supplies (SMPS), general-purpose rectification, and free-wheeling circuits. It has a low forward voltage drop (Vf of 0.50V at IF= 10A) and a fast reverse recovery time (80ns), making it ideal for applications where low switching losses and high speed switching are desirable. Although the maximum available current is lower than other rectifier diodes because of the Schottky Barrier, the efficiency of the diode is greatly enhanced
The specific data is subject to PDF, and the above content is for reference
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