
Allicdata Part #: | 31DQ03-ND |
Manufacturer Part#: |
VS-31DQ03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 30V 3.3A C16 |
More Detail: | Diode Schottky 30V 3.3A Through Hole C-16 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 3.3A |
Voltage - Forward (Vf) (Max) @ If: | 570mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | C-16, Axial |
Supplier Device Package: | C-16 |
Operating Temperature - Junction: | -40°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Rectifiers - Single are integral components in most electronic applications. One particular diode in this category is the VS-31DQ03. This article will discuss the application field and working principle of VS-31DQ03 in detail.
VS-31DQ03 belongs to a family of voltage peaks-clamping and current-transport diodes. It is designed to protect the input terminals of a circuit from overvoltage and large reverse currents. It is made from dielectric material such as gallium arsenide (GaAs) and gallium nitride (GaN). The VS-31DQ03 has a low on-state resistance and high reverse surge characteristics, which enhances its ability to withstand high-voltage surges.
The application field of this diode can be quite extensive. It is suitable for use in a range of different electronic circuits, including power supplies, AC inverters, protection circuits, uninterruptible power supplies (UPS), automotive and aircraft electrical systems, etc. The VS-31DQ03 also has a wide range of operating temperature and pressure range, which makes it a suitable choice in many application fields.
The working principle of the VS-31DQ03 is based on basic electrical and semiconductor principles. In the forward-bias condition, the diode rapidly switches on and passes current to the load. The current is carried through the diode at a steady rate, without overshoots or transients. When the voltage across the diode exceeds the turn-on voltage, the current increases and it begins to conduct. This is known as avalanche breakdown and it occurs when the ruptured bonds between semiconductor atoms resulting from thermal electron-hole injection creates additional current flow.
In the reverse-bias condition, the diode will not pass a significant amount of current. The breakdown voltage is defined by the rated voltage of the diode, meaning that no significant amounts of current will flow until the voltage across the diode rises to this critical level. Then, like in the forward-bias condition, the diode will rapidly switch on and allow current to flow through it. The diode will then work as a voltage protection and current transport device.
The VS-31DQ03 is a reliable and robust diode, with many advantages. It is capable of withstanding high surges, temperatures and pressures. The diode also has low on-state resistance and high reverse surge characteristics, making it suitable for a range of applications. Finally, the working principle of the VS-31DQ03 is based on basic principles of electrical and semiconductor engineering, making it a reliable and easy to use device.
The specific data is subject to PDF, and the above content is for reference
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
