VS-31DQ03 Allicdata Electronics
Allicdata Part #:

31DQ03-ND

Manufacturer Part#:

VS-31DQ03

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 30V 3.3A C16
More Detail: Diode Schottky 30V 3.3A Through Hole C-16
DataSheet: VS-31DQ03 datasheetVS-31DQ03 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3.3A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: C-16, Axial
Supplier Device Package: C-16
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Diodes - Rectifiers - Single are integral components in most electronic applications. One particular diode in this category is the VS-31DQ03. This article will discuss the application field and working principle of VS-31DQ03 in detail.

VS-31DQ03 belongs to a family of voltage peaks-clamping and current-transport diodes. It is designed to protect the input terminals of a circuit from overvoltage and large reverse currents. It is made from dielectric material such as gallium arsenide (GaAs) and gallium nitride (GaN). The VS-31DQ03 has a low on-state resistance and high reverse surge characteristics, which enhances its ability to withstand high-voltage surges.

The application field of this diode can be quite extensive. It is suitable for use in a range of different electronic circuits, including power supplies, AC inverters, protection circuits, uninterruptible power supplies (UPS), automotive and aircraft electrical systems, etc. The VS-31DQ03 also has a wide range of operating temperature and pressure range, which makes it a suitable choice in many application fields.

The working principle of the VS-31DQ03 is based on basic electrical and semiconductor principles. In the forward-bias condition, the diode rapidly switches on and passes current to the load. The current is carried through the diode at a steady rate, without overshoots or transients. When the voltage across the diode exceeds the turn-on voltage, the current increases and it begins to conduct. This is known as avalanche breakdown and it occurs when the ruptured bonds between semiconductor atoms resulting from thermal electron-hole injection creates additional current flow.

In the reverse-bias condition, the diode will not pass a significant amount of current. The breakdown voltage is defined by the rated voltage of the diode, meaning that no significant amounts of current will flow until the voltage across the diode rises to this critical level. Then, like in the forward-bias condition, the diode will rapidly switch on and allow current to flow through it. The diode will then work as a voltage protection and current transport device.

The VS-31DQ03 is a reliable and robust diode, with many advantages. It is capable of withstanding high surges, temperatures and pressures. The diode also has low on-state resistance and high reverse surge characteristics, making it suitable for a range of applications. Finally, the working principle of the VS-31DQ03 is based on basic principles of electrical and semiconductor engineering, making it a reliable and easy to use device.

The specific data is subject to PDF, and the above content is for reference

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