| Allicdata Part #: | 31DQ03TR-ND |
| Manufacturer Part#: |
VS-31DQ03TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 30V 3.3A C16 |
| More Detail: | Diode Schottky 30V 3.3A Through Hole C-16 |
| DataSheet: | VS-31DQ03TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 30V |
| Current - Average Rectified (Io): | 3.3A |
| Voltage - Forward (Vf) (Max) @ If: | 570mV @ 3A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 1mA @ 30V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | C-16, Axial |
| Supplier Device Package: | C-16 |
| Operating Temperature - Junction: | -40°C ~ 150°C |
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VS-31DQ03TR is a type of diode rectifier that features the high power capabilities of a planar construction with rectification capabilities of up to 25A, high reliability, and low reverse recovery charge. It is a very popular semiconductor device used in many applications, such as automotive and lighting applications, switch mode power supply circuits, transformer circuits, and more.
The VS-31DQ03TR diode belongs to the semiconductor device class of single diodes and rectifiers. It is a planar construction diode which means the PN junction is formed between the silicon substrate and a heavily doped polysilicon layer. The polysilicon layer has a high resistivity, which enables high peak power to be developed and maintains a very low on-state voltage.
The VS-31DQ03TR semiconductor device is not only ideal for automotive and lighting applications, but it can also be used as a rectifier for transformer circuits, and its high reliability is greatly appreciated in this application. In the switch mode power supply circuit, the device can be used as a fast-recovery rectifier since its reverse recovery charge is very low.
In terms of the device’s working principle, the VS-31DQ03TR diode is a PN junction rectifier that works based on the principle of minority carrier injection. In a basic PN junction diode, the minority carriers are minority electrons, or holes. When a forward bias voltage is expended across the diode, these minority carriers move towards the P-type material, hence creating an avalanche of electron flow or acceleration of electron avalanche resulting in conduction of the voltage across the PN junction. This means the diode will be forward-biased and current will begin to flow.
In case of a reverse bias, the minority carriers will move towards the N-type material and the hole-electron recombination will take place. The charge carriers will recombine resulting in a zero electric field, thereby making the flow of current through the junction impossible. Hence, the diode will be reverse-biased and current will not flow.
The advantages of using the VS-31DQ03TR single rectifier versus other similar devices is that it has a high power handling capability. This diode also has a very low reverse recovery charge, making it ideal for switch mode power supply circuits. Its planar construction also makes it highly reliable, ideal for lighting and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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VS-31DQ03TR Datasheet/PDF