VS-32CTQ025S-M3

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VS-32CTQ025S-M3 Application Field and Working Principle

VS-32CTQ025S-M3 is a diode array particularly designed for high-temperature and high-power applications. This semiconductor device consists of nine independent SmPowerTM Schottky diodes in a single package. Schottky Diodes are made of a metal-semiconductor junction that is faster to react and handle the high-frequency applications. VS-32CTQ025S-M3 is available in the surface mount type 4-pin SOT-143 package.

Application Field

VS-32CTQ025S-M3 is suitable for high-current, high-temperature, and high-frequency applications It includes a current rating of 0.20 Amps at 25°C, a reverse current of 32mA at 25°C, and a forward voltage of 625V at 25°C. Furthermore, the device has a fast switching rate of less than 6.2 µs. This makes it ideal for applications in switching power supplies, UPSs, automotive, communications systems, and medical devices.

Working Principle

The design and working of VS-32CTQ025S-M3 is based on the principle of rectification. Rectification is the process of converting alternating current to direct current. VS-32CTQ025S-M3 is designed to convert an AC signal or supply into pulsating DC signal. It consists of PN junction and Schottky barrier diodes. PN junction diodes and Schottky barrier diodes are used for different purposes. PN junction diodes are used for rectification and signal isolation, while Schottky diodes have a low-voltage drop, fast switching times, and high current handling capabilities.

PN junction diodes are based on the principle of junction formation between two dissimilar materials. This junction blocks the conduction of current in one direction, while allowing conduction of current in the reverse direction. A p-type semiconductor is coupled to an n-type semiconductor when a certain bias voltage is applied to the system, an electron-hole pair is formed at the junction. The electrons move towards the n-type material while the holes move towards the p-type material, resulting in the junction depletion layer. A reverse bias voltage will cause depletion layer to widen and blocks the current conduction.

Schottky diodes have a diode junction between a semiconductor and a metal. The metal is usually a catalyst material. Schottky diodes are also known as barrier diodes since the semiconductor material and the metal layer form an energetic barrier, due to which the current flow is limited. They are used to limit current flow and in applications such as inverters and rectifiers in which they can operate as high-frequency switches. The Schottky diode in VS-32CTQ025S-M3 allows high-frequency and fast switching of current and can be polarized with a high reverse-bias voltage.

Conclusion

VS-32CTQ025S-M3 is a diode array designed for high-temperature and high-power applications and is composed of nine independent SmPowerTM Schottky Diodes in a single package. It is used for rectification and for applications such as switching power supplies, UPSs, and communications systems. This diode array offers high current handling capabilities and fast switching times, making it ideal for high-temperature, high-frequency, and high-power applications.

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