VS-409CNQ135PBF

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	135V
Current - Average Rectified (Io) (per Diode):	400A
Voltage - Forward (Vf) (Max) @ If:	1.46V @ 400A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	6mA @ 135V
Mounting Type:	Chassis Mount
Package / Case:	TO-244AB
Supplier Device Package:	TO-244AB
Base Part Number:	409CNQ*

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

A VS-409CNQ135PBF is a type of rectifier array which is often referred to as a Schottky barrier rectifier. It is a high speed, low forward ratings, and relatively low off-state leakage. It is frequently used in power management and signal applications and is a popular choice for the switching of signals and data.

Application Field

This device is suitable for a wide range of applications, mainly in DC-DC and AC-DC applications and power management, such as switch mode power supplies, voltage clamping, and level shifting. It also find uses in consumer electronics, instrumentation, general-purpose signal switching, lasers, and microwave communication systems. The main advantage of this device is its high switching speed. Because of this, it is often utilized for high-frequency and fast switching duties.

Working Principle

The VS-409CNQ135PBF is an array package that contains multiple Schottky diodes. The Schottky diode is a type of diode that uses a Schottky barrier to form the junction between two semiconductors. This barrier is formed through two metals connecting to each other and creates a very narrow depletion region when forward biased. The Schottky diode has very low forward voltage and has some of the lowest reverse leakage at high frequencies. When a current passes through the diode into the anode, a field is created that repels majority carriers away from the junction and they move towards the cathode. This process is referred to as the drift field effect. This process enables the electron to overcome any barrier and is responsible for the low forward voltage drop. The Schottky diode also has much lower reverse current, which further reduces the forward voltage drop. When a voltage is applied across the diode, the electrons in the conduction band move towards the anode, which creates an electric field and a current in the opposite direction. This process is known as the drift field effect and it allows for a much faster switching speed than standard diodes.

Conclusion

The VS-409CNQ135PBF is an ideal choice for high speed switching applications such as DC-DC and AC-DC applications and power management. The high speed of its switching makes it well suited for high frequency and fast switching duties. Its low forward voltage, low reverse leakage, and low reverse current also make it an attractive option. It is available in a variety of packages and can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference