Allicdata Part #: | VS-40EPF06PBF-ND |
Manufacturer Part#: |
VS-40EPF06PBF |
Price: | $ 3.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 40A TO247AC |
More Detail: | Diode Standard 600V 40A Through Hole TO-247AC Modi... |
DataSheet: | VS-40EPF06PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 3.47130 |
25 +: | $ 2.94689 |
100 +: | $ 2.55408 |
500 +: | $ 2.17422 |
1000 +: | $ 1.83368 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 40A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 40A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 180ns |
Current - Reverse Leakage @ Vr: | 100µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The VS-40EPF06PBF is a type of single rectifier diode designed for use in applications with a power requirement of up to 40 Watts. This diode is available in a thru-hole package and is designed to minimize losses and save power in medium power applications. It can be used in a range of applications such as electronic ballasts, inverters, motor speed controls, and DC-to-DC converters.
The VS-40EPF06PBF is a fourth generation Si diode with a low forward voltage rating of 0.6V and a maximum junction temperature of 150 degrees Celsius. Its optimized design reduces losses when subjected to rapid switching conditions. Its low capacitance and low thermal resistance make it ideal for high frequency switching applications.
This single rectifier diode has several beneficial features. It is designed with a glass passivated PN junction to reduce junction losses and increase reliability. Its low forward voltage rating is beneficial to reduce conduction losses while its high rating temperature is beneficial to reduce errors due to temperature variations. It has a 200V reverse current rating and a maximum forward current rating of 40 amperes.
The working principle of the VS-40EPF06PBF is based on the PN junction theory. A PN junction is an interface between two differently doped semiconductor materials. When an external voltage is applied to the junction, an electric field is created, which aligns the charge carriers of the two materials and allow current to flow through them. In the VS-40EPF06PBF diode, an anode is connected to one of the semiconductors, while a cathode is connected to the other semiconductor. When a positive voltage is applied to the anode with respect to the cathode, current is allowed to flow through the diode. However, when the voltage polarity is reversed, the electric field created is in the opposite direction and no current is allowed to flow through the junction.
In addition to the general-purpose application field, the VS-40EPF06PBF diode can be used in motor speed control, inverters, electronic ballasts, and DC-to-DC converters. Its optimized design allows it to minimize losses under rapid switching conditions and cope with high frequency applications. Its wide range of features makes it suitable for a variety of applications that require a high power output and low losses.
The specific data is subject to PDF, and the above content is for reference
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