VS-40TPS12A-M3 Allicdata Electronics
Allicdata Part #:

VS-40TPS12A-M3-ND

Manufacturer Part#:

VS-40TPS12A-M3

Price: $ 5.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: SCR 1200V 55A TO-247
More Detail: SCR 1.2kV 55A Standard Recovery Through Hole TO-24...
DataSheet: VS-40TPS12A-M3 datasheetVS-40TPS12A-M3 Datasheet/PDF
Quantity: 429
1 +: $ 5.91570
10 +: $ 5.51570
100 +: $ 4.90280
1000 +: $ 3.97580
10000 +: $ 2.18240
Stock 429Can Ship Immediately
$ 5.92
Specifications
Current - On State (It (RMS)) (Max): 55A
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
Current - Off State (Max): 500µA
Current - Hold (Ih) (Max): 200mA
Series: --
Current - On State (It (AV)) (Max): 35A
Voltage - On State (Vtm) (Max): 1.85V
Current - Gate Trigger (Igt) (Max): 150mA
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Voltage - Off State: 1.2kV
Part Status: Active
Packaging: Tube 
Description

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Thyristors, or silicon-controlled rectifiers (SCRs), are widely used in modern applications due to their ability to rectify alternating current (AC) into direct current (DC) more efficiently than traditional diode rectifiers. The VS-40TPS12A-M3 is a four-layer power thyristor designed for industrial and home applications. This article will discuss the application field and working principle of the VS-40TPS12A-M3.

The VS-40TPS12A-M3 is a high power, high reliability thyristor used in applications from solar energy systems to motors, elevators, and household appliances. This SCR is capable of handling up to 40 Amps of continuous current and has a blocking voltage of 1200V. The semiconductor junction temperature of the VS-40TPS12A-M3 is 0 to 125 degrees Celsius and its thermal load is 0.12 W/K. All of these features make the VS-40TPS12A-M3 a good choice for applications requiring a high level of power.

The VS-40TPS12A-M3 works on the principle of a four-layer semiconductor junction. This junction is composed of two p-type layers, one n-type layer, and one minus p-type layer. In order for the two electrons to form a conductive path along this device, the minority carriers must be injected into the device. The device is then said to be "on" and the current flows through it. To turn the device "off" the minority carrier must be extracted from the device and the current will be blocked.

To control the switching of the device, a trigger is required. The VS-40TPS12A-M3 is typically triggered using an external gate voltage. The gate voltage needs to be higher than a predetermined threshold, typically 9V for the VS-40TPS12A-M3, before the majority carriers can move and initiate conduction. This makes it possible to control when the device turns on and off.

The main advantage of the VS-40TPS12A-M3 is its capability to handle high currents and blocking voltage. This makes the device suitable for a wide range of applications, including solar energy systems, motors, elevators and other applications involving large currents. The device also provides good reliability and high temperature operation, making it a good choice for industrial applications.

To conclude, the VS-40TPS12A-M3 is a four-layer power thyristor designed for industrial and home applications. It can handle up to 40 Amps of continuous current and has a blocking voltage of 1200V. The device works on the principle of a four-layer semiconductor junction and is triggered using an external gate voltage. The main advantage of the VS-40TPS12A-M3 is its ability to handle high currents and high blocking voltage, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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