VS-40TTS12PBF Allicdata Electronics
Allicdata Part #:

VS-40TTS12PBF-ND

Manufacturer Part#:

VS-40TTS12PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: SCR 1200V 40A TO-220
More Detail: SCR 1.2kV 40A Standard Recovery Through Hole TO-22...
DataSheet: VS-40TTS12PBF datasheetVS-40TTS12PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - On State (It (RMS)) (Max): 40A
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 140°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - Off State (Max): 500µA
Current - Hold (Ih) (Max): 100mA
Series: --
Current - On State (It (AV)) (Max): 25A
Voltage - On State (Vtm) (Max): 1.6V
Current - Gate Trigger (Igt) (Max): 35mA
Voltage - Gate Trigger (Vgt) (Max): 1.3V
Voltage - Off State: 1.2kV
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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Thyristors, also known as silicon controlled rectifiers (SCRs), are semiconductor devices that can control the flow of electrical current. A thyristor is a three-terminal device with an anode, a cathode and a gate. Thyristors are distinguished from transistors in that the control element is mainly a gate electrode, rather than a base current, and they can be used to control both alternations and direct current. This makes them particularly useful for low-frequency power regulation applications in which the speed of response is important.

The VS-40TTS12PBF is a thyristor that is mainly used for current control and AC voltage-sensitive protection applications. It is manufactured using a high-quality crystalline silicon material and includes a 600V maximum blocking voltage and 2A hold current.

The operating principle of a thyristor is based on the "avalanche effect”. This is the phenomenon in which electrons become sufficiently energetic to generate additional electrons through the interaction with the silicon lattice. This effect is useful in designing thyristors since it allows the device to remain in an off state until it is triggered with a low-level signal. Once activated, the voltage required to keep the device in an on state is significantly lower than the forward-bias voltage. The reverse-bias voltage, however, can be 10 times higher than the forward-bias voltage, which is why it is important to ensure that the thyristor is operated in a safe region at all times.

The VS-40TTS12PBF is a thyristor with a variety of applications. It can be used for controlling load current in AC motor drives, industrial AC voltage regulation, and AC power control in temperature cycle systems. It can also be used in combination with other semiconductor components to provide an AC-sensitive protective circuit.

In terms of its working principle, the VS-40TTS12PBF thyristor works on the avalanche effect. When the gate is left open, the device remains in an off state. However, when a low-level gate signal is applied, this triggers an avalanche effect which causes the anode current to increase, causing the device to turn on. This low-level gate signal is kept low to ensure that the device remains in the on state even when the voltage across the anode-cathode terminals is reduced.

Given its effective avalanche effect and its high blocking-voltage characteristics, the VS-40TTS12PBF can be used for a variety of AC voltage regulation and power control applications. Furthermore, its low-level gate signal requirements makes it well-suited for applications where a rapid response is critical.

The specific data is subject to PDF, and the above content is for reference

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