
Allicdata Part #: | VS-43CTQ100-011HN3-ND |
Manufacturer Part#: |
VS-43CTQ100-011HN3 |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 100V 20A TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 20... |
DataSheet: | ![]() |
Quantity: | 1000 |
900 +: | $ 1.14246 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 810mV @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 100V |
Operating Temperature - Junction: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The VS-43CTQ100-011HN3 is part of the diodes-rectifiers-arrays family. It is a high performance and cost-effective Schottky power rectifier array. The device features low forward voltage drop and ultrafast reverse recovery time. It is easy to install and is corrosion resistant due to its epoxy glas-polyester resin case. This diode array is suitable for use in high frequency applications, power supplies, switch mode power supply (SMPS), and power converters.
A powerhouse of efficiency, its electrical characteristics include a maximum forward voltage of 0.8V, a reverse recovery time of 20ns or less, a forward current of 150mA and a surge current of 8A. With a reverse leakage current of 0.5mA at 25°C and a minimum operating junction temperature of -65°C, it is designed to offer superior performance in both short and long-term electrical conditions. As for its physical characteristics, the package size is 3.2mm x 4.2mm, making it the perfect match for space-restricted designs.
At the heart of the VS-43CTQ100-011HN3 lies the working principle of a Schottky diode. A Schottky diode is a semiconductor device that acts as a rectified power source by using a non-ohmic (energetic) contact between metal and semiconductor as its junction instead of a p-n junction. Due to the absence of a depletion zone, the forward voltage drop is lower than with standard diodes. The lower voltage drop results in increased efficiency. When forward bias is applied to the diode, current flows through the non-ohmic contact and through the diode, allowing current to flow in one direction.
When reverse bias is applied to the diode, a very small reverse current flows and the diode is heavily damped. This is due to the metal junction becoming highly resistant and hence, the current doesn\'t flow back into the metal from the semiconductor. The low reverse leakage current of the VS-43CTQ100-011HN3 allows for a longer lifetime and higher efficiency.
In terms of its application field, the VS-43CTQ100-011HN3 is used for various applications in the industry. Its application field range from DC-DC converters and motor control to power management circuits, such as inverters and EMI/RFI filters. Due to its low forward voltage drop and superior reverse recovery time, it offers superior performance in high-speed switching applications, allowing for decreased switching losses and increased efficiency. Moreover, its high surge current rating, low power dissipation and high dielectric strength make it suitable for use in a wide range of industrial applications.
In short, the VS-43CTQ100-011HN3 is an ideal solution for various industries, such as automotive and consumer electronics, due to its low forward voltage drop, ultrafast reverse recovery time and high surge current rating. The device\'s working principle is based on the Schottky diode, which makes use of a non-ohmic contact between metal and semiconductor as its junction. The device is highly useful in power supplies, switch mode power supply (SMPS), and power converters, allowing for increased efficiency and decreased switching losses.
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