
Allicdata Part #: | VS-47CTQ020STRL-M3-ND |
Manufacturer Part#: |
VS-47CTQ020STRL-M3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 20V 20A D2PAK |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 20V 20A... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 450mV @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 3mA @ 20V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
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Diodes - Rectifiers - Arrays are widely used in many different applications, because they offer low cost, high speed power conversion. The VS-47CTQ020STRL-M3 belongs to the category of diodes rectifier arrays, and are specifically designed for fast-switching applications. In this article, we’ll take a look at the application field and working principle of the VS-47CTQ020STRL-M3.
The VS-47CTQ020STRL-M3 is suitable for general purpose and is used in many power management and telecommunications systems. It is mainly used in automotive, industrial and consumer electronics, and also in UPS systems. This fast-switching power MOSFET module has a package which is optimized for low-inductance and fast reverse recovery time, which enables the device to operate at low forward voltage drop. The module comes with a wide operating temperature range (0-85 °C) and is designed to provide reliable and efficient power conversion.
The working principle of the VS-47CTQ020STRL-M3 is quite simple, and is based on a MOSFET power transistor. The power converts the energy supplied, usually in the form of a DC input current, into a switched output current that is denominated with a different voltage. The triggering voltage is controlled by the internal gate resistor, and the propagation delay of the switching is minimized by the low inductance of the MOSFET. This allows for a fast switching time and a low current consumption from the system.
The VS-47CTQ020STRL-M3 also provides power isolation and high power density in a very small package. The device presents very low on-state resistance and can be used for high-side and low-side power switching and is especially suitable for applications switching frequencies up to 2MHz. The device provides over-voltage protection, current limitation, and thermal protection, which makes this device suitable for Power Factor Correction and motor control applications.
In conclusion, the VS-47CTQ020STRL-M3 is an excellent choice for fast-switching applications, particularly in automotive, industrial, and consumer systems. The device has a wide operating temperature range, provides low power consumption, low inductance and fast reverse recovery time, and allows for high power density without sacrificing power efficiency. The device also provides protection against over-voltage and current limit protection, as well as thermal shutdown, making it suitable for Power Factor Correction and motor control applications. As such, the VS-47CTQ020STRL-M3 belongs to the category of diodes rectifier arrays, which offer an economical and efficient solution for power conversion.
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