Allicdata Part #: | VS-60EPF10-M3GI-ND |
Manufacturer Part#: |
VS-60EPF10-M3 |
Price: | $ 10.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 60A TO247AC |
More Detail: | Diode Standard 1000V 60A Through Hole TO-247AC Mod... |
DataSheet: | VS-60EPF10-M3 Datasheet/PDF |
Quantity: | 20 |
1 +: | $ 9.00270 |
25 +: | $ 7.92869 |
100 +: | $ 6.98582 |
500 +: | $ 6.21440 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 60A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 480ns |
Current - Reverse Leakage @ Vr: | 100µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Diodes are semiconductor devices used to control the direction of current flow in a circuit. The VS-60EPF10-M3 is a single diode rectifier ideal for low-power rectification applications in commercial, industrial, and portable environments. It is a medium-power single diode rectifier with a low forward voltage drop, a maximum reverse voltage of 600 V, and an operating temperature range of –65°C to +150°C. This makes it an ideal choice for applications where space is limited and the component cost must be kept low.
The VS-60EPF10-M3 diode is a dual-purpose component suitable for use as either a rectifier or a voltage regulator. As a rectifier, it can be used in an AC-to-DC power supply to convert alternating current (AC) to direct current (DC). As a voltage regulator, it can provide a constant voltage output for use in a variety of applications. The VS-60EPF10-M3 diode can also be used to protect sensitive electronics from reverse voltage by allowing current to flow through it in one direction only.
The VS-60EPF10-M3 diode consists of a P-type semiconductor material, and an N-type semiconductor material. In the forward direction, the P-type material has a lower resistance than the N-type material, which allows current to flow in the forward direction. In the reverse direction, the P-type material has a higher resistance than the N-type material, which prevents current from flowing in the reverse direction.
The VS-60EPF10-M3 diode is available in various packages and with various ratings for different levels of power. It is also available in a variety of packages such as radial, axial, through-hole and surface-mount. This enables it to be used in diverse applications including power supplies, DC-to-DC conversion, low-noise switching, current limiting, protection, and more. The VS-60EPF10-M3 diode has a high current capacity and requires minimal space due to its lower power consumption. This makes it a great choice for a wide range of applications.
The VS-60EPF10-M3 diode is widely used in a range of industries because it has the versatility to be applied in a many different ways. Its low power consumption, low forward voltage drop, and high current capacity are all highly desirable characteristics for a range of applications. It is an ideal component for applications such as low power conversion, circuit protection, low noise switching, and voltage regulation. In addition, its environmental and operational characteristics allow it to be used in a range of environments, including commercial, industrial and medical.
The VS-60EPF10-M3 diode is an invaluable component in the design of electronic systems. Its wide range of application and operation ensure that it is suitable for a range of applications and devices. Despite its small size, the VS-60EPF10-M3 diode provides a great deal of functionality, making it an excellent choice for applications that require a reliable and accurate component.
The specific data is subject to PDF, and the above content is for reference
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