Allicdata Part #: | VS-60EPS08PBF-ND |
Manufacturer Part#: |
VS-60EPS08PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 60A TO247AC |
More Detail: | Diode Standard 800V 60A Through Hole TO-247AC Modi... |
DataSheet: | VS-60EPS08PBF Datasheet/PDF |
Quantity: | 857 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 1.09V @ 60A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -40°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VS-60EPS08PBF is a single pole, low forward voltage drop, high-efficiency rectifier device. It is designed to be used in DC to AC power conversion circuits. It has a forward voltage drop of 200mV typical and a peak repetitive reverse voltage of 600V. This makes it suitable for low-power applications like motor control and switch mode power supplies. The device also has a temperature coefficient of\ -0.39mV/K which enables it to accurately regulate the input and output voltages in these applications.The construction of VS-60EPS08PBF involves two epitaxial layers of doped silicon to make the P and N layers. This is a common method used for single phase LEDs and diodes. This construction makes the device durable since there is less thermal stress due to the single layer of silicon. The forward voltage drop of the device is due to the built-in electric field which is caused by the depletion layer formed at the P-N junction. This device also has a built-in low inductance package which helps to reduce the excessive amounts of stored energy.The VS-60EPS08PBF is mainly used in the following applications:1. Motor control and drive power supplies2. Switch mode power supplies3. DC to AC power conversion4. High frequency rectifiersThe working principle of VS-60EPS08PBF involves an electric field created by the depletion layer of the P-N junction. This electric field causes electric charges to build up on either side of the junction, resulting in the build-up of a potential difference. This potential difference causes current to flow in the device. The amount of current depends on the forward voltage drop of the device, which is determined by the doping level in the P and N layers.When used in power conversion circuits, the VS-60EPS08PBF will act as a rectifier, which is a device that converts alternating current to direct current. It does this by allowing current to flow in one direction and blocking current from flowing in the opposite direction. This allows for more efficient power conversion as the power delivery is more consistent.The VS-60EPS08PBF is also used in various high frequency rectifier applications. It is able to handle higher frequencies, making it ideal for high-frequency applications such as motor control and switch mode power supplies.Overall, the VS-60EPS08PBF is a very useful device that can be used in many different applications. Its reliability and low forward voltage drop make it ideal for use in low-power applications. Additionally, its built-in low inductance package makes it suitable for use in high frequency circuits.
The specific data is subject to PDF, and the above content is for reference
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...