Allicdata Part #: | VS-60EPS16PBF-ND |
Manufacturer Part#: |
VS-60EPS16PBF |
Price: | $ 3.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.6KV 60A TO247AC |
More Detail: | Diode Standard 1600V 60A Through Hole TO-247AC Mod... |
DataSheet: | VS-60EPS16PBF Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 2.77436 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 30A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 1600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -40°C ~ 150°C |
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- Diodes - Rectifiers - Single
The VS-60EPS16PBF is a single phase standard recovery rectifier diode. This type of diode is a two terminal semiconductor device that allows current to pass in one direction only, blocking current flow in the other direction. The VS-60EPS16PBF is designed for applications requiring high current capabilities, such as rectification and power supply circuits.
Application Field
The VS-60EPS16PBF demonstrates high performance characteristics under both single and three phase applications. It is well suited for applications such as power management, battery chargers, free wheeling diodes, and low forward voltage applications. It is also used for a variety of circuit protection, current monitoring, and testing application, as well as AC-DC and DC-DC conversion. The diode can handle scenarios with a moderate operating temperature range up to 150°C and current up to 0.8 A. The VS-60EPS16PBF is also capable of achieving a low forward voltage drop of 1 V.
Working Principle
At the crystal level, the operation of the diode is based on the PN junction. In the forward bias mode, when the anode has a higher voltage than the cathode, electrons are kicked out to the P region. This creates an area of negative ions or holes on the N side. The current then flows in the forward direction from the anode to the cathode. In the reverse bias mode, the voltage of the anode drops and the electric fields in the junction become the opposite. The fields tend to push the electrons in the N region back, which creates a low resistance. This blocks the flow of current across the diode.
In the case of the VS-60EPS16PBF, the diode is designed to have a low reverse leakage current, fast switching speed and low forward voltage. It also has a package option with either a plastic material or a metal material that ensures a better heat dissipation and contact resistance. Additionally, this type of diode is marked with the logo on the face or body to reduce errors in identification.
The specific data is subject to PDF, and the above content is for reference
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