Allicdata Part #: | VS-60EPU04HN3-ND |
Manufacturer Part#: |
VS-60EPU04HN3 |
Price: | $ 1.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 60A TO247AC |
More Detail: | Diode Standard 400V 60A Through Hole TO-247AC |
DataSheet: | VS-60EPU04HN3 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.41170 |
Series: | Automotive, AEC-Q101, FRED Pt® |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 60A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 85ns |
Current - Reverse Leakage @ Vr: | 50µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes-Rectifiers-Single is one of the many types of semiconductor devices. One particular device that falls into this category is the VS-60EPU04HN3. This device is a Silicon PN Junction Diode designed to handle a wide range of applications in different fields. In this article, we will explore the application field and working principle of this diode.
The VS-60EPU04HN3 is an ideal choice for applications that require a high reverse voltage capability, low forward voltage drop, and low power dissipation. It is a fast-recovery, low-capacitance diode that is suitable for high speed DC/DC conversion, high-frequency switches, and RF signal rectification, among others. It is also suitable for noise suppression, clamping, and buffering applications.
The VS-60EPU04HN3 is designed for use in a wide range of voltage and current environments, making it extremely versatile. It is capable of operating within a peak reverse voltage of 700V and a maximum continuous forward current of 60A. This means that it can be used in a wide range of applications, from automotive and aircraft systems to factory automation and computer systems.
As far as its working principle goes, the VS-60EPU04HN3 operates on the p-n junction principle. Basically, it is a diode with two parts, the anode and the cathode. When an electric current is applied, the anode becomes positively charged and the cathode is negatively charged. This establishes a potential difference across the device, creating a voltage drop. When the applied current reaches a certain threshold, the p-n junction conducts and allows current flow, allowing for rectification.
The VS-60EPU04HN3 also features high surge capacity and a fast reverse recovery time. This means that when an overvoltage is applied, it will be able to dissipate the excess energy in a very short time, averting any potential damage. Additionally, it also features a high temperature coefficient, allowing it to better handle the thermal conditions in various environments.
In conclusion, the VS-60EPU04HN3 is a highly versatile and reliable semiconductor device that is suitable for a wide range of applications. Its fast reverse recovery time, as well as its high surge capacity, makes it an ideal choice for high-frequency switches, DC/DC conversion, and noise suppression, among other applications. Moreover, its p-n junction principle helps it to reliably conduct high-voltage and current, making it a great choice for many markets.
The specific data is subject to PDF, and the above content is for reference
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...