VS-60EPU04HN3 Allicdata Electronics
Allicdata Part #:

VS-60EPU04HN3-ND

Manufacturer Part#:

VS-60EPU04HN3

Price: $ 1.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 60A TO247AC
More Detail: Diode Standard 400V 60A Through Hole TO-247AC
DataSheet: VS-60EPU04HN3 datasheetVS-60EPU04HN3 Datasheet/PDF
Quantity: 1000
500 +: $ 1.41170
Stock 1000Can Ship Immediately
$ 1.57
Specifications
Series: Automotive, AEC-Q101, FRED Pt®
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 60A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes-Rectifiers-Single is one of the many types of semiconductor devices. One particular device that falls into this category is the VS-60EPU04HN3. This device is a Silicon PN Junction Diode designed to handle a wide range of applications in different fields. In this article, we will explore the application field and working principle of this diode.

The VS-60EPU04HN3 is an ideal choice for applications that require a high reverse voltage capability, low forward voltage drop, and low power dissipation. It is a fast-recovery, low-capacitance diode that is suitable for high speed DC/DC conversion, high-frequency switches, and RF signal rectification, among others. It is also suitable for noise suppression, clamping, and buffering applications.

The VS-60EPU04HN3 is designed for use in a wide range of voltage and current environments, making it extremely versatile. It is capable of operating within a peak reverse voltage of 700V and a maximum continuous forward current of 60A. This means that it can be used in a wide range of applications, from automotive and aircraft systems to factory automation and computer systems.

As far as its working principle goes, the VS-60EPU04HN3 operates on the p-n junction principle. Basically, it is a diode with two parts, the anode and the cathode. When an electric current is applied, the anode becomes positively charged and the cathode is negatively charged. This establishes a potential difference across the device, creating a voltage drop. When the applied current reaches a certain threshold, the p-n junction conducts and allows current flow, allowing for rectification.

The VS-60EPU04HN3 also features high surge capacity and a fast reverse recovery time. This means that when an overvoltage is applied, it will be able to dissipate the excess energy in a very short time, averting any potential damage. Additionally, it also features a high temperature coefficient, allowing it to better handle the thermal conditions in various environments.

In conclusion, the VS-60EPU04HN3 is a highly versatile and reliable semiconductor device that is suitable for a wide range of applications. Its fast reverse recovery time, as well as its high surge capacity, makes it an ideal choice for high-frequency switches, DC/DC conversion, and noise suppression, among other applications. Moreover, its p-n junction principle helps it to reliably conduct high-voltage and current, making it a great choice for many markets.

The specific data is subject to PDF, and the above content is for reference

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