Allicdata Part #: | VS-80CNQ045ASMPBF-ND |
Manufacturer Part#: |
VS-80CNQ045ASMPBF |
Price: | $ 10.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 35V 40A D618SM |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 35V 40A... |
DataSheet: | VS-80CNQ045ASMPBF Datasheet/PDF |
Quantity: | 1000 |
400 +: | $ 9.65440 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 35V |
Current - Average Rectified (Io) (per Diode): | 40A |
Voltage - Forward (Vf) (Max) @ If: | 520mV @ 40A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5mA @ 35V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | D-61-8-SM |
Supplier Device Package: | D-61-8-SM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Rectifiers - Arrays are an important type of electronic components which are used in the electrical and electronic engineering industry for a wide range of applications. The VS-80CNQ045ASMPBF is a diode rectifier array in a 4-pin SMP package from Vishay Intertechnology. It is designed specifically for surface mount applications and provides low forward voltage drop, low reverse leakage current, and improved thermal performance compared to other diode rectifier arrays.
The VS-80CNQ045ASMPBF is a high current rectifier diodes array made of four series connected avalanche diodes in a single package. It is a low-power type power Schottky barrier diode which is a medium-power discrete diode with an integrated avalanche diode. The array is constructed with a common anode and the diodes are coupled in series. The construction allows the diodes to work in parallel to achieve higher current capability.
In a nutshell, the VS-80CNQ045ASMPBF is a medium-power, low-power diode rectifier array chip that offers a variety of beneficial features. It has a low forward voltage drop, low reverse leakage current, and improved thermal performance compared to other diode rectifier arrays. It is also capable of handling high current and is designed specifically for surface mount applications. This makes it ideal for a variety of applications such as LED lighting, battery chargers, and telecom applications.
The VS-80CNQ045ASMPBF provides excellent clamping ratings by utilizing the avalanche breakdown of the PN junction. It has excellent ESD protection capability up to 8 kV, as well as low thermal resistance and good clamping performance. The package also includes an integrated protection device to prevent over-temperature conditions, an anti-body diode to prevent latch-up, and a temperature monitor.
The working principle behind the VS-80CNQ045ASMPBF involves the avalanche breakdown of the PN junction. When the forward voltages across the PN junction reaches or exceeds the avalanche breakdown voltage, the electrons and holes are swept across their respective junction by the electric field which is created by the electric field between the opposite conductance regions. This electric field causes an avalanche breakdown allowing current to start flowing.
In terms of applications, the VS-80CNQ045ASMPBF is suitable for use in many applications. It is often used in power supplies and LED lighting. It is also used in automotive, battery charging and telecom applications. It is also used in high-speed switching and battery chargers. Additionally, it is ideal for use in automotive, high-speed switching, and telecom applications.
Overall, the VS-80CNQ045ASMPBF is a practical and reliable solution for a variety of electronic components. It has low forward voltage drop, low reverse leakage current, and improved thermal performance compared to other diode rectifier arrays. It is ideal for a variety of applications such as LED lighting, battery chargers, and telecom applications. Its working principle involves the avalanche breakdown of the PN junction which allows for current to start flowing.
The specific data is subject to PDF, and the above content is for reference
DIODE SILICON 650V 17A TO220Diode Array ...
DIODE MODULE 600V 35A SM4Diode Array 1 P...
DIODE MODULE 1.8KV 120A D1Diode Array 1 ...
DIODE ARRAY SCHOTTKY 35V TO220ABDiode Ar...
DIODE MODULE 1.4KV 59ADiode Array 1 Pair...
DIODE ARRAY GP 400V 20A TO3PNDiode Array...