VS-80EPS12PBF

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1200V
Current - Average Rectified (Io):	80A
Voltage - Forward (Vf) (Max) @ If:	1.17V @ 80A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 1200V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC
Operating Temperature - Junction:	-40°C ~ 150°C

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Introduction

The VS-80EPS12PBF is a diode rectifier that can be used for many different applications from power conversion to switching supplies. It is a single diode rectifier that uses a P-channel field-effect transistor (FET) as the rectifying element. The VS-80EPS12PBF is designed to handle up to 80A of continuous current and up to 600V of repetitive reverse voltage. The device can operate at temperatures ranging from -40°C to +125°C.

Overview

The VS-80EPS12PBF diode rectifier is available in a number of package types, including a TO-220 package. It is a fast-recovery diode rectifier with a short recovery time that allows it to be used in high frequency applications. The device has a built-in MOSFET that helps to reduce switching losses and improve efficiency in applications requiring high current. It also has an effective parallel connection configuration that ensures a stable voltage output regardless of load conditions.

Applications

The VS-80EPS12PBF can be used in a variety of applications, such as in buck converters and inverters, as well as in switching power supplies. It can be used in the power output sections of electronic equipment, including servers and communications equipment. It can also be used in automotive and industrial applications, as well as low noise power supplies and motor control circuits.

Working Principle

The VS-80EPS12PBF device operates in three parts: the rectifying element (the MOSFET), the gate driver, and the parasitic triple diode circuit. The gate driver controls the MOSFET gate voltage and helps to reduce the switching losses and improve fading performance. The parasitic triple diode circuit is connected in parallel with the MOSFET and helps to reduce the amount of capacitive load and improve the device\'s surge current capabilities. The rectifying element works by allowing current flow only in one direction and blocking current flow in the opposite direction. This makes it possible to convert AC to DC and to provide a stable output voltage regardless of load changes.

Conclusion

The VS-80EPS12PBF is a single diode rectifier designed to handle up to 80A of continuous current and up to 600V of repetitive reverse voltage. It is capable of operating at temperatures ranging from -40°C to +125°C and is designed to be used in a range of applications, such as in buck converters, inverters, and switching power supplies. It uses a MOSFET as the rectifying element, which helps to reduce switching losses and improve efficiency. The device also has an effective parallel connection configuration that ensures a stable voltage output regardless of load conditions.

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