VS-8ETH03STRRPBF Allicdata Electronics
Allicdata Part #:

VS-8ETH03STRRPBF-ND

Manufacturer Part#:

VS-8ETH03STRRPBF

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 300V 8A TO263AB
More Detail: Diode Standard 300V 8A Surface Mount TO-263AB (D²P...
DataSheet: VS-8ETH03STRRPBF datasheetVS-8ETH03STRRPBF Datasheet/PDF
Quantity: 1000
800 +: $ 0.63670
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Series: Automotive, AEC-Q101, FRED Pt®
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 27ns
Current - Reverse Leakage @ Vr: 20µA @ 300V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Introduction to the VS-8ETH03STRRPBF Diode

VS-8ETH03STRRPBF diodes are a type of single rectifier diodes that are commonly used in power supplies and high-voltage applications. The device is designed to withstand up to 800 V and can handle up to 8 A of current.

Applications of the VS-8ETH03STRRPBF Diode

VS-8ETH03STRRPBF diodes are primarily used in power supplies and high-voltage applications, such as power converters, power inverters, and switch-mode power supplies. The device is also used in high-speed rectification, light-controlled rectification, and for RC networks.

Working Principle of the VS-8ETH03STRRPBF Diode

VS-8ETH03STRRPBF diodes employ a PN junction diode construction. This type of diode is a unidirectional device that allows electrical current to flow in only one direction. When a voltage is applied across the device, current will flow from the anode to the cathode and the diode becomes forward biased. However, if the polarity of the voltage is reversed, the reverse current will be blocked and the diode will become reverse biased. This is the fundamental principle of the PN junction diode.

Characteristics of the VS-8ETH03STRRPBF Diode

The VS-8ETH03STRRPBF diode has a variety of performance characteristics that make it well-suited for high-voltage applications. First, the device has a low on-state voltage drop of ~1V. This allows it to handle higher voltages without consuming a large amount of power. Additionally, the device has a maximum reverse voltage of 800 V and a maximum operating temperature of 175°C. Finally, the device has a typical response time of 200ns and is UL recognized.

Conclusion

The VS-8ETH03STRRPBF is a type of single rectifier diode that is commonly used in power supplies and high-voltage applications. It is constructed from a PN junction diode and has a low on-state voltage drop, a maximum reverse voltage of 800 V, and a maximum operating temperature of 175°C. Additionally, the device has a typical response time of 200ns and is UL recognized. This makes it a reliable and cost-effective solution for high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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