Allicdata Part #: | VS-8ETH06-1HM3-ND |
Manufacturer Part#: |
VS-8ETH06-1HM3 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A TO262 |
More Detail: | Diode Standard 600V 8A Through Hole TO-262 |
DataSheet: | VS-8ETH06-1HM3 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.40682 |
Series: | Automotive, AEC-Q101, FRED Pt® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.4V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 50µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes are important devices used in many applications today and the rectifiers are used extensively in AC/DC power conversion. The VS-8ETH06-1HM3 is a single diode rectifier that is suitable for both low-power and high-power applications.
The VS-8ETH06-1HM3 is a fast-acting, single rectifier diode with an ultra-small on-resistance, which allows it to have rapid switching speed with minimal power consumption and heat dissipation. The device is constructed with two separate cathode and anode regions, allowing for a higher voltage handling capacity and high current carrying capacity. It comes in a SOT-23 package, which makes it easy to integrate into high-density circuits.
The VS-8ETH06-1HM3 is the ideal solution for any applications needing increased current conduction, such as bridge rectifiers, power supplies, AC inverters, and other DC/AC power conversions. It can also be used in high-frequency industrial switch-mode power supplies and motor drive applications, making it very versatile. Due to its ultra-low on-resistance, the components provide excellent performance with low oscillations, while still achieving high power efficiency.
The working principle of the VS-8ETH06-1HM3 is based on the p-n junction technology. When the device is connected in the forward direction between two terminals, the junction capacitance and internal barrier in the PN junction will help in forming a very low on-resistance, allowing current to flow in the desired direction. In the reverse direction, the PN junction will act as a diode and the diode will be in an OFF or blocking state, not allowing the current to flow. This working principle is used in almost every type of diode, but with the VS-8ETH06-1HM3, the device is able to achieve superior switching speed and low on-resistance.
The VS-8ETH06-1HM3 is an ideal component for the applications requiring high-speed switching and low on-resistance. Due to its ultra-small package and high current conduction capability, the component is suitable for high-density applications. The device offers superior performance in terms of fast switching speed and high power efficiency, making it an ideal choice for many industrial applications. It is also a great choice for any applications needing fast and efficient power conversion.
The specific data is subject to PDF, and the above content is for reference
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