| Allicdata Part #: | VS-8EWH02FNTRR-M3-ND |
| Manufacturer Part#: |
VS-8EWH02FNTRR-M3 |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 8A D-PAK |
| More Detail: | Diode Standard 200V 8A Surface Mount D-PAK (TO-252... |
| DataSheet: | VS-8EWH02FNTRR-M3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.23864 |
| Series: | FRED Pt® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 970mV @ 8A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 24ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 200V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-PAK (TO-252AA) |
| Operating Temperature - Junction: | -65°C ~ 175°C |
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The VS-8EWH02FNTRR-M3 is a single diodes rectifier component. It is also known as a low-power integrated chip with a built-in fast-recovery diode. This component is used to protect power supply circuits or other components such as inductors and capacitors from excessive current or voltage, which can potentially cause damage or component malfunction.
The VS-8EWH02FNTRR-M3 component is designed with a low forward voltage drop, fast switching speed, and high-temperature performance. Its integrated construction provides additional reliability and a low component footprint, allowing for convenient installation. The component can be used in automotive, telecom, industrial, and other applications.
The working principle of the VS-8EWH02FNTRR-M3 component relates to the movement of electrons through a diode junction. This process is referred to as rectification, wherein electrical current is converted from alternating current (AC) to direct current (DC). The VS-8EWH02FNTRR-M3 component facilitates this conversion by allowing one-way flow of electrons, mainly in a single direction through the diode substrate. The substrate consists of an anode and cathode and two semiconductor materials.
When an applied negative voltage to the anode is greater than the forward voltage drop of the component, current will flow in the reverse direction, as long as the reverse voltage remains above the junction voltage. When the reverse voltage drops below the junction voltage, the component will enter a blocking state, no current will flow through. With this capability, the component is able to protect sensitive components or other circuits from excessive voltages.
The VS-8EWH02FNTRR-M3 component is also able to provide improved temperature performance when compared to other single diode rectifiers. Its chip package includes a high temperature resistant material, which helps to enhance the component’s overall performance. This, in turn, allows the component to remain functional even when exposed to temperatures that are higher than normal.
The VS-8EWH02FNTRR-M3 component is a valuable addition to any circuit due to its reliable performance and temperature resistance. It is ideal for applications that require a low forward voltage drop, fast switching speed, and high temperature performance. Its integrated construction helps to reduce the component’s footprint, allowing for convenient installation and use in a variety of automotive, telecom, industrial, and other circuits.
The specific data is subject to PDF, and the above content is for reference
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VS-8EWH02FNTRR-M3 Datasheet/PDF