VS-8EWS10STRLPBF Allicdata Electronics
Allicdata Part #:

VS-8EWS10STRLPBF-ND

Manufacturer Part#:

VS-8EWS10STRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 8A DPAK
More Detail: Diode Standard 1000V 8A Surface Mount D-PAK (TO-25...
DataSheet: VS-8EWS10STRLPBF datasheetVS-8EWS10STRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 8EWS10
Description

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Application Field and Working Principle of the VS-8EWS10STRLPBF

Diodes, also known as rectifiers, are electrical components typically used for converting AC (alternating current) to DC (direct current). The VS-8EWS10STRLPBF (VS-8EWS10STRLPBF) is an ultra-fast and ultra-low-capacitance switching diode that provides reliable, efficient and low power solutions for a wide range of applications. As a single diode, it has the following characteristics:

  • Voltage Rating: Up to 50V Maximum
  • Zero voltage drop: 0.2V at 20mA
  • Low capacitance: 0.02pF maximum
  • Ultra-low leakage current: 5nA maximum
  • High surge current: 5A peak (2A average)
  • Lead-free, RoHS-compliant version available

These characteristics make it suitable for a variety of applications, such as high-speed switching and signal conditioning in an ever-changing range of industrial, automotive, computing and consumer electronic products.

Working principle of the VS-8EWS10STRLPBF is based on the same rectifying principle of all other diodes. Diodes are basically two-terminal, non-linear electrical components that allow current to flow in one direction only. It consists of a P-type semiconductor material connected to an N-type semiconductor material, known as a P-N junction. When the two materials are combined, they form a diode junction. This junction has a unique property called ‘reverse bias’, where the diode only conducts current when the voltage across it is in the opposite direction than the applied voltage.

The VS-8EWS10STRLPBF is configured in a surface-mount technology package, allowing it to be placed directly onto a circuit board for simple and efficient mounting. The small size also simplifies circuit designs and allows shorter lead times for manufacturing. Its low capacitance and low leakage current provides superior switching characteristics for a wide range of applications. Due to its ultra-fast switching speed, it is suitable for high-frequency (HF) and radio-frequency (RF) applications.

In summary, the VS-8EWS10STRLPBF is an ideal diode for a wide range of applications, due to its ultra-fast and ultra-low-capacitance characteristics. Its surface-mount packaging makes it easy to mount onto a circuit board, while its low capacitance and low leakage current make it suitable for HF and RF applications. This diode is expected to pave the way for further improvements in the field of switching and signal conditioning, with even more efficient and reliable solutions expected in the near future.

The specific data is subject to PDF, and the above content is for reference

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