VS-8EWS12STRL-M3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1200V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 8A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	50µA @ 1200V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252AA)
Operating Temperature - Junction:	-55°C ~ 150°C

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Diodes - Rectifiers - Single

The VS-8EWS12STRL-M3 rectifier diode is an efficient and cost-effective rectifier diode for a wide variety of electronic applications. Specifically, the VS-8EWS12STRL-M3 is a high temperature, surface mounted rectifier diode that is suitable for use in a variety of rectifying applications. It is an ideal choice for rectifying functions requiring higher temperature and power ratings, such as power supplies, servers and high frequency rectifiers.

Application Field

The VS-8EWS12STRL-M3 rectifier diode is suitable for rectifying applications requiring higher temperature, power and voltage ratings. Common applications include power electronics, high frequency rectifier circuits, motor controllers, power supplies, computer power supplies, server power supplies and other equipment that require a high temperature rectifier diode. It is also suitable for automotive, battery charging, medical and power metering applications.

Working Principle

The VS-8EWS12STRL-M3 rectifier diode is a high quality semiconductor device that uses the principles of rectification to convert alternating current (AC) to direct current (DC). Rectification works by blocking current flow in one direction, while allowing current to flow freely in the opposite direction. The VS-8EWS12STRL-M3 rectifier diode utilizes a p-n junction to accomplish this function, allowing for sharp and quick changes in voltage.The diode is constructed of doped silicon; either N-type (negative) or P-type (positive) silicon is utilized. Doping is used to create an electrostatic barrier by adding impurities to the silicon, which changes its characteristics and electrical properties. This barrier creates a junction between the N-type and P-type materials. When the junction is reverse biased, no current flows, while when it is forward biased, current will flow without any external resistance.The VS-8EWS12STRL-M3 offers a fast switching time with low power dissipation, enabling it to operate efficiently under higher temperature and power ratings. Its blocking voltage rating of 800 volts allows it to perform well in applications where higher voltages are present.In addition, the VS-8EWS12STRL-M3 has a low reverse recovery time, which is beneficial in reducing power losses and improving efficiency. It also features a fast recovery time, which allows it to switch off quickly and reduce power dissipation, resulting in improved system efficiency.

Conclusion

The VS-8EWS12STRL-M3 rectifier diode is a high temperature, high power, cost-effective rectifier diode that is suitable for a variety of rectifying applications. Its fast switching time with low power dissipation, high voltage rating and fast recovery time makes it an ideal choice for applications requiring higher temperatures and power ratings. It is suitable for use in power electronics, high frequency rectifier circuits, motor controllers, power supplies, computer power supplies, server power supplies and other equipment that require a high temperature rectifier diode.

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