VS-8EWS12STRPBF Discrete Semiconductor Products |
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Allicdata Part #: | VS-8EWS12STRPBFGITR-ND |
Manufacturer Part#: |
VS-8EWS12STRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.2KV 8A DPAK |
More Detail: | Diode Standard 1200V 8A Surface Mount D-PAK (TO-25... |
DataSheet: | VS-8EWS12STRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 1200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 8EWS12 |
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Diodes - Rectifiers - Single: VS-8EWS12STRPBF Application Field and Working Principle
The VS-8EWS12STRPBF diode is a single-phase rectifier with special features. It is a good choice for applications where the rapid rate of change in current and voltage must be well controlled. This is because the VS-8EWS12STRPBF features relatively low conduction losses, which are desirable characteristics for this type of diode.
The VS-8EWS12STRPBF Diode family is advanced Schottky Barrier Rectifiers that provide great performance and stable operation at very low forward voltage drop. They offer a low leakage current when reverse biased and low capacitance when forward biased. The Diode also offers superior thermal stability and can withstand high junction temperatures of up to 125°C.
The working principle of this type of diode involves the transition of electrons from a lower energy level to a higher energy level across the diode’s junction. The diode will permit current flow in the forward direction only when there is a potential difference across it because the diode is designed to allow current in the direction where the electrons have the higher energy level.
In the reverse-biased direction, the electrons from the negative side of the diode junction travel through the barrier and recombine with the holes on the positive side. This recombination results in a reverse current, and the VS-8EWS12STRPBF diode is designed to keep this reverse current below its maximum reverse voltage, which is 200V.
The VS-8EWS12STRPBF offers flexibility of choice with different packages. It is available in EDF packages, which come in two sizes: 3.2x3.2x2.2mm and 4.3x3.3x2.1mm. This allows customers to choose the package size that suits their application best. It is also available in exposed die version for surface mounting.
The VS-8EWS12STRPBF is suitable for applications such as LED lighting, power management, automotive, and consumer electronics. This diode is a good solution for high frequency applications due to its low conduction losses. It is also a good choice for low forward voltage requirements, as the VS-8EWS12STRPBF offers a low forward voltage drop of 0.8V.
The VS-8EWS12STRPBF diode provides excellent performance in many electrical applications. It offers good functionality in both forward and reverse directions, allowing it to be used in various applications. It also has a low leakage current, low conduction losses, and low forward voltage drop, making it a good choice for devices that require precise current and voltage control.
The specific data is subject to PDF, and the above content is for reference
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